Surface waveguide and method of manufacture

• US 20050180713A1
• Filed: 01/12/2005
• Published: 08/18/2005
• Est. Priority Date: 01/13/2004
• Status: Active Grant

• Current Assignee: OctroliX B.V.
• Original Assignee: LioniX BV (Panthera Group B.V.)
• Inventors: Heideman, Rene Gerrit, Hoekman, Marcel
• Granted Patent: US 7,142,759 B2
• Time in Patent Office: Days
• US Class Current: 385/129
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/121 Channel; buried or the like
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/132 by deposition of thin films

Abstract

A surface waveguide is disclosed. In the illustrative embodiment, the waveguide has a core and an upper and lower cladding. The core has a thickness that is greater than the critical thickness of the material that composes the core. This is achieved by depositing/growing the core as a conformal layer within a region that is recessed from the planar surface of the lower cladding, wherein the recessed region has a width that is no more than twice the critical thickness of the core material.

Claims

1. A method comprising forming a first conformal layer of a first material in a first recess within a first layer, wherein:

said first conformal layer substantially fills said first recess;

said first material is characterized by a first critical thickness; and

a width of said first recess is no greater than twice said first critical thickness.

2. The method of claim 1 wherein said width of said first recess is at least said first critical thickness.

3. The method of claim 1 wherein said first recess has a depth that is greater than said first critical thickness.

4. The method of claim 1 wherein said first material is suitable for propagating an optical signal.

5. The method of claim 1 wherein said first material is selected from the group consisting of stoichiometric silicon nitride and silicon dioxide that is deposited using tetraethylorthosilicate as a precursor gas in a low pressure chemical vapor deposition process.

6. The method of claim 1 wherein said first material is selected from the group consisting of stoichiometric and non-stoichiometric compounds of silicon nitride, TEOS, silicon carbide, silicon monoxide, silicon-rich silicon nitride, indium phosphide, gallium arsenide, indium-gallium arsenide, indium-gallium-arsenide-phosphide, lithium niobate, silicon oxy-nitride, phosphosilicate glass, borosilicate glass, and boro-phosphosilicate glass.

7. The method of claim 1 further comprising forming said first layer.

8. The method of claim 1 further comprising forming a second layer over said first conformal layer.

9. The method of claim 8 wherein said first layer comprises a second material and said second layer comprises a third material, and further wherein said second material and said third material are individually selected from the group consisting of stoichiometric and non-stoichiometric compounds of silicon nitride, TEOS, silicon carbide, silicon monoxide, silicon-rich silicon nitride, indium phosphide, gallium arsenide, indium-gallium arsenide, indium-gallium-arsenide-phosphide, lithium niobate, silicon oxy-nitride, phosphosilicate glass, borosilicate glass, and boro-phosphosilicate glass.

10. The method of claim 8 further comprising:

forming a second recess in said second layer,

forming a second conformal layer of a second material in said second recess, wherein;

said second conformal layer substantially fills said second recess;

said second material is characterized by a second critical thickness; and

a width of said second recess is no greater than twice said second critical thickness.

11. The method of claim 10 wherein said width of said first recess is at least said first critical thickness and said width of said second recess is at least said second critical thickness.

12. The method of claim 1 further comprising forming a layer of an electro-optically active material on said first conformal layer.

13. The method of claim 1 further comprising removing at least a region of said conformal layer and forming a layer of an electro-optically active material in said region.

14. A waveguide comprising a core, wherein said core comprises a first material that is suitable for propagating an optical signal, and wherein said first material is characterized by a critical thickness, and wherein a portion of said core has a width that is no more than twice said critical thickness, and further wherein said height of said portion of said core is greater than said critical thickness.

15. The waveguide of claim 14 wherein said core comprises a material selected from the group consisting of stoichiometric silicon nitride and silicon dioxide that is deposited using tetraethylorthosilicate as a precursor gas in a low pressure chemical vapor deposition process.

16. The waveguide of claim 14 further comprising a lower cladding, wherein said lower cladding comprises a recess, and wherein said recess is filled with said first material, and wherein said recess has a width that is no more than twice said critical thickness, and further wherein a height of said recess is greater than said critical thickness.

17. The waveguide of claim 14 wherein said core comprises a slab and a ridge, and wherein said ridge is said portion of said core that has a height that is greater than said critical thickness.

18. The waveguide of claim 14 wherein said portion of said core has a width that is greater than said critical thickness.

19. The waveguide of claim 14 further comprising:

a lower cladding, wherein said core is disposed on said lower cladding;

an upper cladding, wherein said upper cladding is disposed on at least a portion of said core; and

a second core comprising a second material that is suitable for propagating an optical signal, wherein said second core is disposed on said upper cladding.

20. An article comprising:

a first surface waveguide comprising;

a core, wherein said core comprises a first material suitable for propagating an optical signal, and wherein said first material has a critical thickness, and further wherein a width of said core is within a range of one to two times said c critical thickness;

a first lower cladding layer, wherein said first lower cladding layer is disposed beneath at least a portion of said core; and

a first upper cladding layer, wherein said first upper cladding layer is disposed above said first lower cladding layer; and

a second surface waveguide comprising;

a core, wherein said core comprises a second material suitable for propagating an optical signal; and

a second lower cladding layer, wherein said first lower cladding layer is disposed beneath at least a portion of said core of said second surface waveguide, and further wherein said first upper cladding layer and said second lower cladding layer are the same layer.