Method of fabricating passivation layer for organic devices

• US 20050181535A1
• Filed: 02/16/2005
• Published: 08/18/2005
• Est. Priority Date: 02/17/2004
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Yun, Sun Jin, Lee, Jin Ho, Ko, Young Wook, Lim, Jung Wook
• Application Number:
  US11/059,854
• Publication Number:
  US 20050181535A1
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

Provided is a method of fabricating a passivation layer for an organic device, including: forming the organic device on a substrate; and forming a passivation layer on the organic device. Here, forming the passivation layer on the organic device includes forming an inorganic thin film by thin film deposition using pulsed plasma.

Claims

1. A method of fabricating a passivation layer for an organic device, comprising:

forming the organic device on a substrate; and

forming a passivation layer on the organic device,

wherein forming the passivation layer on the organic device comprises;

forming an inorganic thin film by thin film deposition using pulsed plasma.

2. The method of claim 1, wherein the thin film deposition using the pulsed plasma is one of plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced sputter deposition.

3. The method of claim 1, wherein the pulsed plasma is one of radio frequency, radio frequency-magnetron, electron cyclotron resonance, and an inductively coupled plasma type.

4. The method of claim 1, wherein the inorganic thin film is a layer formed of one of Al₂O₃, Al₂O₃:

N (including a small amount of N), TiO₂, TiO₂;

N (including a small amount of N), SiO₂, SiO₂;

N (including a small amount of N), Si₃N₄, ZrO₂, ZrO₂;

N (including a small amount of N), a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N or a multilayer thin film formed of combinations of Al₂O₃, Al₂O₃;

N, TiO₂, TiO₂;

N, SiO₂, SiO₂;

N, Si₃N₄, ZrO₂, ZrO₂;

N, a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N.

5. The method of claim 1, wherein the inorganic thin film is a thin film formed of one or more of Al₂O₃, Al₂O₃:

N, TiO₂, TiO₂;

N, SiO₂, SiO₂;

N, Si₃N₄, ZrO₂, ZrO₂;

N, a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N.

6. The method of claim 1, wherein forming the passivation layer on the organic device further comprises:

forming an organic passivation thin film on the organic device.

7. The method of claim 6, wherein when the passivation layer is formed on the organic device, forming the organic thin film and forming the inorganic thin film are alternately performed.

8. The method of claim 1, wherein forming the inorganic thin film comprises:

periodically repeating the injection of the source vapor and O₂ gas, that is isolated from each other by purge gas; and

generating O₂ plasma to form reactive species in synchronization with a injection period of O₂ to form an inorganic oxide layer-by-layer using atomic layer deposition.

9. The method of claim 8, the plasma pulse time is in the range of 0.1 to several seconds.

10. The method of claim 1, wherein forming the inorganic thin film further comprises:

forming an inorganic oxide layer by chemical vapor deposition using a source vapor and O₂; and

generating pulsed plasma.

11. The method of claim 1, wherein the passivation layer encloses the substrate.

12. A method for fabricating a passivation layer for an organic device, comprising:

forming the passivation layer enclosing a substrate; and

forming the organic device on the passivation layer,

wherein forming the passivation layer comprises;

forming an inorganic thin film by thin film deposition using pulsed plasma.

13. The method of claim 12, further comprising:

forming another passivation layer on the organic device,

wherein forming the another passivation layer on the organic device comprises;

forming an inorganic thin film by thin film deposition using pulsed plasma.

14. The method of claim 12, wherein the thin film deposition using the pulsed plasma is one of plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and sputter deposition.

15. The method of claim 12, wherein the pulsed plasma is one of radio frequency, radio frequency-magnetron, electron cyclotron resonance, and an inductively coupled plasma type.

16. The method of claim 12, wherein the inorganic thin film is a layer formed of one of Al₂O₃, Al₂O₃:

N, TiO₂, TiO₂;

N, SiO₂, SiO₂;

N, Si₃N₄, ZrO₂, ZrO₂;

N, the a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N or a multilayer thin film formed of combinations of Al₂O₃, Al₂O₃;

N, TiO₂, TiO₂;

N, SiO₂, SiO₂;

N, Si₃N₄, ZrO₂, ZrO₂;

N, the a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N.

17. The method of claim 12, wherein the inorganic thin film is a thin film formed of one or more of Al₂O₃, Al₂O₃:

N, TiO₂, TiO₂;

N, SiO₂, SiO₂;

N, Si₃N₄, ZrO₂, ZrO₂;

N, the a metal(lanthanide group) oxide, or a metal(lanthanide group) oxide including a small amount of N.

18. The method of claim 12, wherein forming the passivation layer on the organic device further comprises:

forming an organic passivation thin film.

19. The method of claim 18, wherein when the passivation layer is formed on the organic device, forming the organic thin film and forming the inorganic thin film are alternately performed.

20. The method of claim 12, wherein forming the inorganic thin film comprises:

periodically repeating the injection of the source vapor and O₂ gas, that is isolated from each other by purge gas; and

generating O₂ plasma to form reactive species in synchronization with a injection period of O₂ to form an inorganic oxide layer-by-layer using atomic layer deposition.

21. The method of claim 12, wherein forming the inorganic thin film further comprises:

forming an inorganic oxide layer by chemical vapor deposition using a source gas and O₂; and

generating pulsed plasma.