Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same
First Claim
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1. A method of crystallizing silicon, comprising:
- generating light having a pulse frequency higher than about 300 Hz;
irradiating the light on at least one amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal; and
transporting the light in a predetermined direction to grow the initial polysilicon crystal.
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Abstract
A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.
10 Citations
47 Claims
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1. A method of crystallizing silicon, comprising:
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generating light having a pulse frequency higher than about 300 Hz;
irradiating the light on at least one amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal; and
transporting the light in a predetermined direction to grow the initial polysilicon crystal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of crystallizing silicon, comprising:
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generating light having a pulse frequency higher than about 300 Hz;
dividing the light into a plurality of light portions;
irradiating each of the plurality of light portions on a respective amorphous silicon thin film of a plurality of amorphous silicon thin films for a predetermined time period to form a plurality of initial polysilicon crystals; and
transporting each of the plurality of light portions in a predetermined direction to grow the plurality of initial polysilicon crystals. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. An apparatus for crystallizing silicon, comprising:
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an attenuator positioned to receive a primary beam having a pulse frequency higher than about 300 Hz from a light source and for generating an attenuated beam;
a concentrator for concentrating the attenuated beam and generating a concentrated beam; and
a light shape transformer for transforming a shape of the concentrated beam and generating a transformed beam, wherein the transformed beam is irradiated on an amorphous silicon thin film to form a polysilicon thin film. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. An apparatus for crystallizing silicon, comprising:
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a light source for generating a primary beam having a pulse frequency higher than about 300 Hz;
an attenuator positioned adjacent to the light source for generating an attenuated beam;
a concentrator positioned adjacent to the attenuator for concentrating the attenuated beam and generating a concentrated beam;
a beam divider positioned adjacent to the concentrator for dividing the concentrated beam into at least two beams; and
at least two light shape transformers positioned adjacent to the beam divider for respectively transforming a shape of each of the at least two beams and generating at least two respective transformed beams, wherein the at least two respective transformed beams are respectively irradiated on at least two amorphous silicon thin films to form at least two polysilicon thin films. - View Dependent Claims (30, 31, 32, 33, 34)
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35. A method of forming a thin film transistor, comprising:
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forming a gate electrode on a substrate;
forming a first insulating layer on the substrate having the gate electrode formed thereon;
forming an amorphous silicon thin film on the first insulating layer;
irradiating light having a pulse frequency in the range of about 300 Hz to about 4 kHz on the amorphous silicon thin film;
transporting the light in a predetermined direction to grow polysilicon crystals to form a polysilicon thin film; and
patterning the polysilicon thin film to form a polysilicon layer on the first insulating layer. - View Dependent Claims (36, 37)
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38. A thin film transistor comprising:
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a gate electrode formed on a substrate;
a first insulating layer formed on the substrate including the gate electrode formed thereon; and
a channel layer disposed on the first insulating layer, wherein the channel layer includes a plurality of polysilicon crystals arranged in a predetermined crystal growth direction. - View Dependent Claims (39, 40, 41, 42, 43)
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44. A display apparatus, comprising:
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a first substrate including a thin film transistor and a pixel electrode; and
a second substrate including a common electrode, wherein a liquid crystal layer is capable of being interposed between the first and second substrates, and the thin film transistor includes;
a gate electrode formed on a transparent substrate;
a first insulating layer formed on the transparent substrate including the gate electrode formed thereon; and
a channel layer disposed on the first insulating layer, wherein the channel layer includes a plurality of polysilicon crystals arranged in a predetermined crystal growth direction. - View Dependent Claims (45, 46, 47)
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Specification