Spin transfer magnetic element having low saturation magnetization free layers
First Claim
1. A magnetic element comprising:
- a pinned layer;
a spacer layer, the spacer layer being nonmagnetic; and
a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer including at least one ferromagnetic material that is diluted with at least one nonmagnetic material and/or ferrimagnetically doped such that the free layer has a low saturation magnetization;
wherein if the free layer includes the at least one ferromagnetic material that is diluted with the at least one nonmagnetic material, then the free layer includes at least CoX, FeX, CoFeX, NiFeX, CoXY, FeXY, CoFeXY, NiFeXY, and/or CoNiFeXY where X or Y is Cr, Cu, Au, B, Nb, Mo, Pt, Pd, Ta, Rh, Ru, Ag, TaN, CuN, TaCuN, and/or CoFeX where X is Cr, Cu, Au, Nb, Mo, Pt, Pd, ta, Rh, Ru, Ag, TaN, CuN, and TaCuN;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element.
2 Assignments
0 Petitions
Accused Products
Abstract
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
-
Citations
44 Claims
-
1. A magnetic element comprising:
-
a pinned layer;
a spacer layer, the spacer layer being nonmagnetic; and
a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer including at least one ferromagnetic material that is diluted with at least one nonmagnetic material and/or ferrimagnetically doped such that the free layer has a low saturation magnetization;
wherein if the free layer includes the at least one ferromagnetic material that is diluted with the at least one nonmagnetic material, then the free layer includes at least CoX, FeX, CoFeX, NiFeX, CoXY, FeXY, CoFeXY, NiFeXY, and/or CoNiFeXY where X or Y is Cr, Cu, Au, B, Nb, Mo, Pt, Pd, Ta, Rh, Ru, Ag, TaN, CuN, TaCuN, and/or CoFeX where X is Cr, Cu, Au, Nb, Mo, Pt, Pd, ta, Rh, Ru, Ag, TaN, CuN, and TaCuN;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 11)
-
-
8. A magnetic element comprising:
-
a first pinned layer;
a spacer layer, the spacer layer being conductive and nonmagnetic;
a free layer having a free layer magnetization, the spacer layer residing between the first pinned layer and the free layer, the free layer being a low saturation magnetization free layer;
a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;
a second pinned layer, the barrier layer being between the free layer and the second pinned layer;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element. - View Dependent Claims (9, 10, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A magnetic element comprising:
-
a first pinned layer;
a first spacer layer, the first spacer layer being nonmagnetic;
a first free layer, the first spacer layer residing between the first pinned layer and the first free layer;
a second free layer having a second free layer magnetization, the first free layer and the second free layer being magnetostatically coupled;
a second spacer layer being nonmagnetic;
a second pinned layer, the second spacer layer residing between the second free layer and the second pinned layer;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element; and
wherein the first free layer is configured to have a first low saturation magnetization and/or the second free layer is configured to have a second low saturation magnetization. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
-
-
44. A method for providing magnetic element comprising:
-
providing a pinned layer;
providing a spacer layer, the spacer layer being nonmagnetic; and
providing a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer including at least one ferromagnetic material that is diluted with at least one nonmagnetic material and/or ferrimagnetically doped such that the free layer has a low saturation magnetization;
wherein if the free layer includes the at least one ferromagnetic material that is diluted with the at least one nonmagnetic material, then the free layer includes at least CoX, FeX, NiFeX, CoXY, FeXY, CoFeXY, NiFeXY, and/or CoNiFeXY where X or Y is Cr, Cu, Au, B, Nb, Mo, Pt, Pd, Ta, Rh, Ru, Ag, TaN, CuN, TaCuN and/or CoFeX where X is Cr, Cu, Au, Nb, Mo, Pt, Pd, Ta, Rh, Ru, Ag, TaN, CuN, and TaCuN;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element.
-
Specification