Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment
First Claim
1. A method for forming an absorber layer containing elements of groups IB, IIIA and VIA, comprising the steps of:
- placing a substrate in a treatment chamber;
performing atomic layer deposition of a group IB element from a first source and a first group IIIA element from a second source and/or a second group IIIA element from a third source onto the substrate to form a film;
annealing the film; and
incorporating one or more group VIA elements into the film to form the absorber layer;
wherein the absorber layer has a thickness greater than about 25 nm.
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Accused Products
Abstract
An absorber layer may be formed on on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
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Citations
63 Claims
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1. A method for forming an absorber layer containing elements of groups IB, IIIA and VIA, comprising the steps of:
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placing a substrate in a treatment chamber;
performing atomic layer deposition of a group IB element from a first source and a first group IIIA element from a second source and/or a second group IIIA element from a third source onto the substrate to form a film;
annealing the film; and
incorporating one or more group VIA elements into the film to form the absorber layer;
wherein the absorber layer has a thickness greater than about 25 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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38. The method of claim 38 wherein depositing the electrode includes the use of one or more precursors from the group of molybdenum chloride, molybdenum iodide, other halides of molybdenum, MoCl5, molybdenum ethoxide, molybdenum VI oxide bis(2,4-pentandedionate), molybdenum hexacarbonyl, molybdenum disilicide, organomolybdenum precursors containing Si or Ge, other organomolybdenum precursors and combinations or mixtures of the above.
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57. A method for forming an absorber layer containing elements of groups IB, IIIA and VIA, comprising the steps of:
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performing atomic layer deposition of a group IB element from a first source and a first group IIIA element from a second source and a second group IIIA element from a third source onto a substrate to form a film;
annealing the film; and
incorporating one or more group VIA elements into the film to form the absorber layer. - View Dependent Claims (58, 59, 60, 61, 62, 63)
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Specification