High power and high brightness white LED assemblies and method for mass production of the same
First Claim
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1. A light emitting diode (LED) assembly emitting light of mixing colors, comprising:
- a first epitaxial layer comprising a first N-type cladding layer, a first P-type cladding layer, and a first active layer sandwiched between said first N-type and said first P-type cladding layers, and emitting light of first wavelength;
a second epitaxial layer comprising a second N-type cladding layer, a second P-type cladding layer, and a second active layer sandwiched between said second N-type and said second P-type cladding layers, and emitting light of second wavelength;
wherein one side of said second epitaxial layer bonding to one side of said first epitaxial layer;
a second electrode for wire bonding disposed on the other side of said second epitaxial layer;
a submount that is electrically conductive;
wherein one side of said submount bonding to the other side of said first epitaxial layer.
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Abstract
High power and high brightness light emitting diode (LED) assemblies emitting white light are disclosed. The present invention also discloses methods for cost effective mass production of the high power and high brightness LED assemblies with high throughput.
72 Citations
32 Claims
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1. A light emitting diode (LED) assembly emitting light of mixing colors, comprising:
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a first epitaxial layer comprising a first N-type cladding layer, a first P-type cladding layer, and a first active layer sandwiched between said first N-type and said first P-type cladding layers, and emitting light of first wavelength;
a second epitaxial layer comprising a second N-type cladding layer, a second P-type cladding layer, and a second active layer sandwiched between said second N-type and said second P-type cladding layers, and emitting light of second wavelength;
wherein one side of said second epitaxial layer bonding to one side of said first epitaxial layer;
a second electrode for wire bonding disposed on the other side of said second epitaxial layer;
a submount that is electrically conductive;
wherein one side of said submount bonding to the other side of said first epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 27, 28)
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14. A light emitting diode (LED) assembly emitting light of mixing colors, comprising:
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a first epitaxial layer comprising a first cladding layer and a first active layer emitting light of first wavelength;
a second epitaxial layer comprising a second cladding layer and a second active layer emitting light of second wavelength;
wherein said first active layer bonding to said second active layer;
a second electrode for wire bonding disposed on said second cladding layer; and
a submount that is electrically conductive;
wherein one side of said submount bonded to said first cladding layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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29. A method for manufacturing light emitting diode (LED) assemblies emitting light of mixing colors, comprises the steps:
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bonding a first epitaxial layer of a first light emitting diode (LED) wafer emitting light of first wavelength to a second epitaxial layer of a second light emitting diode (LED) wafer emitting light of second wavelength to form a LED assembly wafer;
removing the substrate of said first LED wafer, and said first epitaxial layer exposed;
disposing a reflector/Ohmic layer on exposed said first epitaxial layer;
bonding a submount to said reflector/Ohmic layer;
removing the substrate of said second LED wafer, and said second epitaxial layer exposed;
disposing a second electrode on exposed said second epitaxial layer;
dicing said LED assembly wafer into individual LED assemblies. - View Dependent Claims (30)
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31. A lam for LEDs (including LED assemblies), comprises:
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a base for mounting a LED;
a hemisphere-shaped dome formed from a material selected from a group comprising epoxy, glass, and plastics;
wherein said material being doped with nano-particles so that the refraction index of said material is the same or similar to that of the material of the top epitaxial layer of said LED; and
wherein the diameter of said hemisphere-shaped dome being equal to or larger than the production of said refraction index of said material of said dome and the size of said LED. - View Dependent Claims (32)
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Specification