Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
First Claim
1. A magnetic element comprising:
- a pinned layer;
a spacer layer, the spacer layer being nonmagnetic; and
a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer having a high perpendicular anisotropy and an out-of-plane demagnetization energy, the high perpendicular anisotropy having a perpendicular anisotropy energy being at least twenty percent and less than one hundred percent of the out-of-plane demagnetization energy;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element.
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Abstract
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
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Citations
34 Claims
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1. A magnetic element comprising:
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a pinned layer;
a spacer layer, the spacer layer being nonmagnetic; and
a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer having a high perpendicular anisotropy and an out-of-plane demagnetization energy, the high perpendicular anisotropy having a perpendicular anisotropy energy being at least twenty percent and less than one hundred percent of the out-of-plane demagnetization energy;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element.
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2. A magnetic element comprising:
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a first pinned layer;
a spacer layer, the spacer layer being conductive and nonmagnetic;
a free layer having a free layer magnetization, the spacer layer residing between the first pinned layer and the free layer, the free layer having a high perpendicular anisotropy and an out-of-plane demagnetization energy, the high perpendicular anisotropy having a perpendicular anisotropy energy that is less than a one hundred percent of the out-of-plane demagnetization energy;
a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;
a second pinned layer, the barrier layer being between the free layer and the second pinned layer;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A magnetic element comprising:
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a first pinned layer;
a first spacer layer, the first spacer layer being nonmagnetic;
a first free layer, the first spacer layer residing between the first pinned layer and the first free layer, the first free layer having a first out-of-plane demagnetization energy;
a second free layer having a second free layer magnetization, the first free layer and the second free layer being magnetostatically coupled, the second free layer having a second out-of-plane demagnetization energy;
a second spacer layer being nonmagnetic;
a second pinned layer, the second spacer layer residing between the second free layer and the second pinned layer;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element; and
wherein the first free layer is configured to have a first high perpendicular anisotropy having a first perpendicular anisotropy energy that is less than one hundred percent of the first out-of-plane demagnetization energy and/or the second free layer is configured to have a second high perpendicular anisotropy that is less than one hundred percent of the second out-of-plane demagnetization energy. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for providing magnetic element comprising:
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providing a pinned layer;
providing a spacer layer, the spacer layer being nonmagnetic; and
providing a free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer, the free layer having a high perpendicular anisotropy having a perpendicular anisotropy energy that is at least twenty percent and less than one hundred percent of an out-of-plane demagnetization energy for the free layer;
wherein the magnetic element is configured to allow the free layer magnetization to be switched due to spin transfer when a write current is passed through the magnetic element.
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Specification