Light emitting devices

• US 20050191780A1
• Filed: 04/29/2005
• Published: 09/01/2005
• Est. Priority Date: 04/15/2003
• Status: Abandoned Application

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Erchak, Alexei A., Brown, Michael Gregory, Graff, John W., Duncan, Scott W.
• Application Number:
  US11/118,805
• Publication Number:
  US 20050191780A1
• Time in Patent Office: Days
• US Class Current: 438/25
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

Claims

1-36. -36. (canceled)

37. A device, comprising:

a multi-layer stack comprising;

a quantum well containing region;

a reflective layer supported by the quantum well containing region;

a gold-containing layer supported by the reflective layer; and

a bonding layer supported by the gold-containing layer.

38. The method of claim 37, further comprising an n-doped layer supporting the quantum well containing region.

39. The device of claim 37, wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.

40. The device of claim 37, wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.

41. The device of claim 37, wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.

42. The device of claim 37, wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.

43. The device of claim 37, wherein the bonding layer is in direct contact with the gold-containing layer.

44. The device of claim 37, wherein the device is a device selected from the group consisting of light-emitting diodes, lasers, optical amplifiers, and combinations thereof.

45. The device of claim 37, wherein the device comprises a light emitting diode.

46. The device of claim 37, wherein the device is a device selected from the group consisting of OLEDs, flat surface-emitting LEDs, HBLEDs, and combinations thereof.

47. A device, comprising:

a multi-layer stack comprising;

a substrate;

a quantum well containing region supported by the substrate;

a reflective layer supported by the quantum well containing region; and

a gold-containing layer supported by the reflective layer.

48. The device of claim 47, wherein the multi-layer stack further comprises an n-doped layer between the substrate and the quantum-well containing region.

49. The device of claim 47, wherein the multi-layer stack further comprises a p-doped layer between the quantum-well containing region and the reflective layer.

51. The device of claim 47, wherein the multi-layer stack further comprises a diffusion barrier layer between the reflective layer and the gold-containing layer.

52. The device of claim 48, wherein the multi-layer stack further comprises a buffer layer between the substrate and the n-doped layer.

53. The device of claim 48, wherein the multi-layer stack further comprises a current spreading layer between the n-doped layer and the quantum well containing region.

54. The device of claim 47, wherein the multi-layer stack comprises first and second multi-layer stacks bonded with each other.

55. The device of claim 54, wherein the second multi-layer stack comprises:

a submount; and

a bonding layer supported by the submount.

56. The device of claim 55, wherein the second multi-layer stack further comprises a contact layer between the submount and the bonding layer.

57. The device of claim 55, wherein the bonding layer is in direct contact with the gold-containing layer.

50. The device of claim 59, wherein the multi-layer stack further comprises an ohmic contact layer between the p-doped layer and the reflective layer.