Method of forming thin film pattern, method of manufacturing device, electro-optical apparatus and electronic apparatus

• US 20050191781A1
• Filed: 03/18/2004
• Published: 09/01/2005
• Est. Priority Date: 04/01/2003
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hirai, Toshimitsu
• Granted Patent: US 7,214,617 B2
• Time in Patent Office: Days
• US Class Current: 438/30
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H05K 2201/09909 Special local insulating pattern, e.g. as dam around component
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist
• CPC Class Codes: H05K 2203/1173 Differences in wettability, e.g. hydrophilic or hydrophobic areas
• CPC Class Codes: H05K 3/125 by ink-jet printing
• CPC Class Codes: H05K 3/1258 by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 71/135 using ink-jet printing

Abstract

A method of forming a thin film pattern by placing a functional liquid on a substrate, includes a bank formation step of forming banks in accordance with the thin film pattern on the substrate, a residue processing step of removing residue between the banks, and a material placement step of placing the functional liquid between the banks removed the residue.

Claims

1. A method of forming a thin film pattern by placing a functional liquid on a substrate, comprising:

a bank formation step of forming banks in accordance with the thin film pattern on the substrate;

a residue processing step of removing residue between the banks; and

a material placement step of placing the functional liquid between the banks removed the residue.

2. A method of forming a thin film pattern according to claim 1, wherein the residue processing step comprises a step of removing residue in bottom portions between the banks.

3. A method of forming a thin film pattern according to claim 1, wherein the residue processing step comprises a photo irradiation processing step.

4. A method of forming a thin film pattern according to claim 1, wherein the residue processing step comprises a plasma processing step that uses a predetermined processing gas.

5. A method of forming a thin film pattern according to claim 1, wherein the residue processing step comprises a plasma processing step that uses a predetermined processing gas and a photo irradiation processing step.

6. A method of forming a thin film pattern according to claim 1, wherein the residue processing step performs etching using acid.

7. A method of forming a thin film pattern according to claim 4, wherein the banks are formed so as to extend in a predetermined direction, and

the plasma processing step supplies the processing gas while relatively moving the substrate in the predetermined direction relative to the processing gas.

8. A method of forming a thin film pattern according to claim 5, wherein the banks are formed so as to extend in a predetermined direction, and

the plasma processing step supplies the processing gas while relatively moving the substrate in the predetermined direction relative to the processing gas.

9. A method of forming a thin film pattern according to claim 1, further comprising a repellency processing step of imparting repellency to the banks after the residue processing step.

10. A method of forming a thin film pattern according to claim 9, further comprising a step of removing residue from bottom portions between the banks after the repellency processing step of imparting repellency to the banks.

11. A method of forming a thin film pattern according to claim 10, wherein the residue processing step that is performed after the repellency processing step comprises a step of removing residue from bottom portions between the banks.

12. A method of forming a thin film pattern according to claim 10, wherein the residue processing step that is performed after the repellency processing step comprises a photo irradiation processing step.

13. A method of forming a thin film pattern according to claim 10, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas.

14. A method of forming a thin film pattern according to claim 10, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas and a photo irradiation processing step.

15. A method of forming a thin film pattern according to claim 10, wherein the residue processing step performs etching using acid.

16. A method of forming a thin film pattern according to claim 1, wherein the residue processing step is performed once again after the material placement step.

17. A method of forming a thin film pattern according to claim 1, wherein the functional liquid exhibits electroconductivity after undergoing heat processing or light processing.

18. A method of forming a thin film pattern according to claim 1, wherein the functional liquid contains electroconductive fine particles.

19. A device manufacturing method comprising a step of forming a thin film pattern on the substrate using the method of forming a thin film pattern according to claim 1.

20. An electro-optical apparatus comprising a device manufactured using the device manufacturing method according to claim 19.

21. An electronic apparatus comprising the electro-optical apparatus according to claim 20.

22. A method of manufacturing an active matrix substrate comprising:

a first step of forming a gate wire on a substrate;

a second step of forming a gate insulating film on the gate wire;

a third step of laminating a semiconductor layer via the gate insulating film;

a fourth step of forming a source electrode and drain electrode on the gate insulating film;

a fifth step of placing a non-conductive material on the source electrode and the drain electrode;

a sixth step of forming a pixel electrode after the placement of the insulating material,

wherein at least one of the first, fourth, and sixth steps further comprising;

a bank forming step of forming banks to correspond to a formation pattern;

a residue processing step of removing residue between the banks; and

a material placement step of placing the functional material between the banks removed the residue by being discharged using a droplet discharge apparatus.