Process for producing layer structures for signal distribution
First Claim
1. A process for producing layer structures for signal distribution, the process comprising:
- applying a metallic seed layer over a semiconductor body;
applying a first photoresist layer over the metallic seed layer;
producing openings, which are trapezoidal in cross section, in the first photoresist layer by photolithographic patterning of the first photoresist layer;
electrolytically producing layer structures for signal distribution in the openings in the first photoresist layer;
removing the first photoresist layer;
after the first photoresist layer has been removed, applying a second photoresist layer of positive photoresist;
exposing the second photoresist layer; and
removing exposed portions of the second photoresist layer.
4 Assignments
0 Petitions
Accused Products
Abstract
Structures for signal distribution are produced by applying a metallic seed layer over a semiconductor body. An insulating layer is applied over the metallic seed layer and openings in the insulating layer are produced by photolithographic patterning of the insulating layer. Each opening in the insulating layer is trapezoidal in cross section such that an upper portion of the insulating layer is wider than a lower portion of the insulating layer. A conductor is selectively formed over exposed portions of the metallic seed layer. After selectively forming the conductor, the insulating layer is anisotropically etched such that portions of the insulating layer abutting sidewalls of the conductor remain. Alternatively, a second insulating layer can be formed and anisotropically etched.
-
Citations
20 Claims
-
1. A process for producing layer structures for signal distribution, the process comprising:
-
applying a metallic seed layer over a semiconductor body;
applying a first photoresist layer over the metallic seed layer;
producing openings, which are trapezoidal in cross section, in the first photoresist layer by photolithographic patterning of the first photoresist layer;
electrolytically producing layer structures for signal distribution in the openings in the first photoresist layer;
removing the first photoresist layer;
after the first photoresist layer has been removed, applying a second photoresist layer of positive photoresist;
exposing the second photoresist layer; and
removing exposed portions of the second photoresist layer. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A process for producing layer structures for signal distribution, the process comprising:
-
applying a metallic seed layer over a semiconductor body;
applying an insulating layer over the metallic seed layer;
producing openings in the insulating layer by photolithographic patterning of the insulating layer, each opening in the insulating layer being trapezoidal in cross section such that an upper portion of the insulating layer is wider than a lower portion of the insulating layer;
selectively forming a conductor over exposed portions of the metallic seed layer, the conductor producing layer structures for signal distribution in the openings in the insulating layer;
after selectively forming the conductor, anisotropically etching the insulating layer such that portions of the insulating layer abutting sidewalls of the conductor remain. - View Dependent Claims (7, 8, 9, 10, 11, 12)
-
-
13. A process for producing layer structures for signal distribution, the process comprising:
-
forming a conductive layer over a semiconductor body;
applying a first insulating layer over the conductive layer;
producing openings in the first insulating layer by photolithographically patterning the first insulating layer, each opening in the insulating layer being trapezoidal in cross section such that an upper portion of the insulating layer is wider than a lower portion of the insulating layer;
forming a conductor within the openings and electrically contacting the conductive layer, the conductor being trapezoidal in cross section such that an upper portion of the conductor is wider than a lower portion of the conductor and such that the conductor includes sloping sidewalls;
removing the first insulating layer;
after removing the first insulating layer, forming a second insulating layer over the semiconductor body including along the sloping sidewalls of the conductor; and
anisotropically etching the second insulating layer such that portions of the insulating layer abutting the sloping sidewalls of the conductor remain. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
Specification