Plasma processes for depositing low dielectric constant films
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Abstract
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
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Citations
36 Claims
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1-20. -20. (canceled)
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21. A method for depositing an intermetal dielectric layer on a semiconductor substrate, the method comprising:
reacting an organosilicon compound and an oxidizing gas at RF plasma conditions sufficient to deposit an intermetal dielectric layer on the semiconductor substrate, wherein the organosilicon compound comprises one or more silicon atoms and two methyls bonded to each silicon atom, the RF plasma conditions comprise a power density less than 1 W/cm2, and the intermetal dielectric layer is a silicon oxide layer having a carbon content of from 1% to 50% by atomic weight and a dielectric constant of less than 3. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A method for depositing an intermetal dielectric layer on a semiconductor substrate, the method comprising:
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reacting an organosilicon compound and an oxidizing gas at RF plasma conditions sufficient to deposit a dielectric layer on the semiconductor substrate, wherein the organosilicon compound comprises one or more silicon atoms and two methyls bonded to each silicon atom, the RF plasma conditions comprise a power density less than 1 W/cm2, and the dielectric layer is a silicon oxide layer having a carbon content of from 1% to 50% by atomic weight and a dielectric constant of less than 3;
etching the dielectric layer to define an interconnect; and
filling the interconnect with a conductive material. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36)
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Specification