Flip-chip light emitting diode device without sub-mount
First Claim
1. A light emitting device including:
- a light emitting diode having a backside and a front-side with at least one n-type electrode and at least one p-type electrode disposed thereon defining a minimum electrodes separation;
a bonding pad layer including at least one n-type bonding pad and at least one p-type bonding pad defining a minimum bonding pads separation that is larger than the minimum electrodes separation; and
at least one fanning layer interposed between the front-side of the light emitting diode and the bonding pad layer, the at least one fanning layer including a plurality of electrically conductive paths passing through vias of a dielectric layer to provide electrical communication between the at least one n-type electrode and the at least one n-type bonding pad and between the at least one p-type electrode and the at least one p-type bonding pad.
7 Assignments
0 Petitions
Accused Products
Abstract
A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).
128 Citations
38 Claims
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1. A light emitting device including:
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a light emitting diode having a backside and a front-side with at least one n-type electrode and at least one p-type electrode disposed thereon defining a minimum electrodes separation;
a bonding pad layer including at least one n-type bonding pad and at least one p-type bonding pad defining a minimum bonding pads separation that is larger than the minimum electrodes separation; and
at least one fanning layer interposed between the front-side of the light emitting diode and the bonding pad layer, the at least one fanning layer including a plurality of electrically conductive paths passing through vias of a dielectric layer to provide electrical communication between the at least one n-type electrode and the at least one n-type bonding pad and between the at least one p-type electrode and the at least one p-type bonding pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of flip chip bonding a light emitting diode to a support, the light emitting diode having front-side n-type and p-type electrodes defining a minimum electrodes separation therebetween, the method including:
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depositing a dielectric layer over at least the front-side of the light emitting diode, the dielectric layer at least partially sealing the front-side;
forming vias through the dielectric layer accessing the n-type and p-type electrodes;
disposing a first-type electrical contact over vias that access a first-type electrode selected from the group consisting of the p-type electrode and the n-type electrode, the first-type electrical contact extending over the dielectric layer between the vias that access the first-type electrode to define a first-type contact pad;
disposing a second-type electrical contact over one or more vias that access a second-type electrode selected from the group consisting of the other of the p-type electrode and the n-type electrode, the second-type electrical contact extending over the dielectric layer to define a second-type contact pad, the first-type contact pad and the second-type contact pad defining a minimum contact pads separation therebetween that is larger than the minimum electrodes separation; and
flip-chip bonding the first-type contact pad and the second-type contact pad to a substrate via bonding bumps disposed on at least one of the contact pads and the substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of flip chip bonding a light emitting diode having front-side n-type and p-type electrodes defining a minimum electrodes separation therebetween to mechanically secure the light emitting diode to a printed circuit board and to electrically connect the front-side n-type and p-type electrodes with printed circuitry of the printed circuit board, the method including:
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disposing a dielectric layer over at least the n-type and p-type electrodes, the dielectric layer having vias passing therethrough for accessing the n-type and p-type electrodes;
disposing electrical contact pads over the vias and the dielectric layer, the electrical contact pads including a p-type contact pad connecting with the p-type electrode through selected vias and an n-type contact pad connecting with the n-type electrode through selected other vias, the contact pads being arranged over the dielectric layer with a minimum contact pads separation therebetween that is larger than the minimum electrodes separation; and
flip-chip bonding the contact pads to printed circuitry of the printed circuit board via bonding bumps arranged on one of the printed circuit board and the chip, the flip-chip bonding having a mechanical tolerance that is greater than the minimum electrodes separation and less than the minimum contact pads separation, there being no sub-mount arranged between the contact pads and the printed circuit board. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A method of processing a wafer having a plurality of light emitting diodes fabricated thereon, each light emitting diode having front-side n-type and p-type electrodes defining a minimum electrodes separation therebetween, the method including:
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disposing a dielectric layer over at least the n-type and p-type electrodes, the dielectric layer having vias passing therethrough for accessing the n-type and p-type electrodes;
disposing electrical contact pads over the vias and the dielectric layer, the electrical contact pads for each light emitting diode including a p-type contact pad that connects with the p-type electrode and an n-type contact pad that connects with the n-type electrode, the connecting being through the vias, the contact pads for each light emitting diode being arranged over the dielectric layer with a minimum contact pads separation therebetween that is larger than the minimum electrodes separation; and
after the disposing of the electrical contact pads, dicing the wafer to separate the light emitting diodes. - View Dependent Claims (36, 37, 38)
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Specification