Solvent prewet and method to dispense the solvent prewet
First Claim
1. A semiconductor wafer, comprising:
- a semiconductive substrate having a diameter including a plurality of conductive, insulative and semiconductive layers;
a layer of a first solvent disposed upon substantially the entirety of a top surface of the semiconductive substrate, wherein the first solvent includes diacetone alcohol at a volume percentage of between 70% and 90% and aliphatic ester; and
a liquid photosensitive material including a second solvent, having a preselected volume disposed in a central portion of the semiconductive substrate.
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Abstract
A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.
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Citations
35 Claims
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1. A semiconductor wafer, comprising:
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a semiconductive substrate having a diameter including a plurality of conductive, insulative and semiconductive layers;
a layer of a first solvent disposed upon substantially the entirety of a top surface of the semiconductive substrate, wherein the first solvent includes diacetone alcohol at a volume percentage of between 70% and 90% and aliphatic ester; and
a liquid photosensitive material including a second solvent, having a preselected volume disposed in a central portion of the semiconductive substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor wafer, comprising:
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a semiconductive substrate having a diameter including a plurality of conductive, insulative and semiconductive layers;
a layer of a first solvent disposed upon substantially the entirety of a top surface of the semiconductive substrate, wherein the first solvent includes aliphatic ester at a volume percentage of between 10% and 30% and diacetone alcohol; and
a liquid photosensitive material including a second solvent, having a preselected volume disposed in a central portion of the semiconductive substrate. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor wafer, comprising:
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a semiconductive substrate having a diameter including a plurality of conductive, insulative and semiconductive layers;
a layer of a first solvent disposed upon substantially the entirety of a top surface of the semiconductive substrate, wherein the first solvent includes diacetone alcohol at a volume percentage of between 70% and 90% and aliphatic ester; and
a photosensitive material including a second solvent, disposed upon substantially the entirety of a top surface of the semiconductive substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A semiconductor wafer, comprising:
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a semiconductive substrate having a diameter;
a partially dried layer of a solvent comprising a diacetone alcohol having a volume percentage of between 70% and 90%, and an aliphatic ester having a volume percentage of between 10% and 30% disposed upon substantially the entirety of a top surface of the semiconductive substrate; and
a photo resist material having a thickness disposed upon substantially the entirety of the top surface of the semiconductive substrate, wherein the photo resist has a thickness uniformity of plus and minus 50? across at least 90% of the diameter of semiconductive substrate. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A semiconductor wafer, comprising:
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a substrate;
a layer of a solvent comprising a diacetone alcohol having a volume percentage of approximately 90%, and an aliphatic ester having a volume percentage of approximately 10%; and
a photo resist material having a thickness uniformity of plus and minus 50? across at least 90% of the diameter of the substrate. - View Dependent Claims (33, 34, 35)
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Specification