Differential amplifier with large input common mode signal range

• US 20050195032A1
• Filed: 04/29/2005
• Published: 09/08/2005
• Est. Priority Date: 12/15/2000
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Wang, Hongwei, Venes, Ardie
• Granted Patent: US 7,064,610 B2
• Time in Patent Office: Days
• US Class Current: 330/253
• CPC Class Codes: H03F 2203/45371 the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
• CPC Class Codes: H03F 2203/45612 the IC comprising one or more input source followers as input stages in the IC
• CPC Class Codes: H03F 2203/7203 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier
• CPC Class Codes: H03F 3/45183 Long tailed pairs H03F3/4521, H03F3/45237 take precedence
• CPC Class Codes: H03F 3/4521 Complementary long tailed pairs having parallel inputs and being supplied in parallel
• CPC Class Codes: H03F 3/45708 Controlling the common source circuit of the differential amplifier
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

A design for a differential amplifier with a large input common mode signal range. The differential amplifier comprises two differential pairs, each having two amplifying MOSFETs. A source follower is connected to the gate terminal of each amplifying MOSFET in one of the differential pairs. A differential signal applied to the differential amplifier comprises two separate signal. Each separate signal is applied to the gate terminals of both the amplifying MOSFET in the differential pair not driven by the source follower and the driven MOSFET of the source follower. The differential amplifier further comprises a pair of switch MOSFETs connected to a current source MOSFET. The switch MOSFETs act to control the distribution of the total current flowing from the current source MOSFET and, consequently, to determine which differential pair works dominantly to amplify the input signals. Each source follower acts to offset the voltage of its input signal to compensate for the range loss due to the bias voltages and the threshold voltages within the differential amplifier.

Claims

1. A differential amplifier, comprising:

a differential input capable of receiving a differential signal;

a first differential pair coupled to said differential input;

a second differential pair, coupled to said differential input, and connected in parallel with said first differential pair at a differential output; and

a differential offset circuit, coupled between said differential input and said second differential pair, and capable of level shifting said differential signal from a first level to a second level, said differential offset circuit having a first source follower coupled between a first input terminal of said differential input and a first amplifying transistor of said second differential pair and a second source follower coupled between a second input terminal of said differential input and a second amplifying transistor of said second differential pair.

2. The differential amplifier of claim 1, wherein said first amplifying transistor is a first field effect transistor and said second amplifying transistor is a second field effect transistor.

3. The differential amplifier of claim 2, wherein said first source follower comprises:

a third field effect transistor with a source terminal connected to a gate terminal of said first field effect transistor; and

a fourth field effect transistor with a drain terminal connected to said gate terminal.

4. The differential amplifier of claim 3, wherein said first field effect transistor and said second field effect transistor are a first type that is one of a NMOSFET and a PMOSFET.

5. The differential amplifier of claim 4, wherein said third field effect transistor and said fourth field effect transistor are a second type, said second type being opposite of said first type.

6. The differential amplifier of claim 1, further comprising:

a differential switch circuit, coupled to said first differential pair and said second differential pair, and capable of controlling a first current flow to said first differential pair and a second current flow to said second differential pair.

7. The differential amplifier of claim 6, wherein said differential switch circuit comprises:

a first switch transistor coupled between said first differential pair and a current source; and

a second switch transistor coupled between said second differential pair and said current source.

8. The differential amplifier of claim 7, wherein said first switch transistor is a first field effect transistor and said second switch transistor is a second field effect transistor.

9. The differential amplifier of claim 1, wherein said first differential pair comprises a first field effect transistor with a first drain terminal, and a second field effect transistor with a second drain terminal, and said second differential pair comprises a third field effect transistor with a third drain terminal connected to said first drain terminal, and a fourth field effect transistor with a fourth drain terminal connected to said second drain terminal.

10. An amplifier, comprising:

an input capable of receiving an input signal;

a first amplifying transistor coupled to said input;

a second amplifying transistor, coupled to said input, and connected in parallel with said first amplifying transistor at an output; and

an offset circuit, coupled between said input and said second amplifying transistor, and capable of level shifting said input signal from a first level to a second level, said offset circuit having a source follower coupled between said input and said second amplifying transistor.

11. The amplifier of claim 10, wherein said second amplifying transistor is a first field effect transistor.

12. The amplifier of claim 11, wherein said source follower comprises:

a second field effect transistor with a source terminal connected to a gate terminal of said first field effect transistor; and

a third field effect transistor with a drain terminal connected to said gate terminal.

13. The amplifier of claim 12, wherein said first field effect transistor is a first type that is one of a NMOSFET and a PMOSFET.

14. The amplifier of claim 13, wherein said second field effect transistor and said third field effect transistor are a second type, said second type being opposite of said first type.

15. The amplifier of claim 10, further comprising:

a switch, coupled to said first amplifying transistor and said second amplifying transistor, and capable of controlling a first current flow to said first amplifying transistor and a second current flow to said second amplifying transistor.

16. The amplifier of claim 15, wherein said switch comprises a switch transistor coupled between said first amplifying transistor and a current source.

17. The differential amplifier of claim 16, wherein said switch transistor is a field effect transistor

18. The amplifier of claim 10, wherein said first amplifying transistor is a first field effect transistor and said second amplifying transistor is a second field effect transistor.

19. A method of extending an input signal range of a component that receives the input signal, comprising the steps of:

(1) level shifting a voltage of the input signal;

(2) selecting a subcomponent, from a plurality of subcomponents within the component, to amplify said level shifted voltage; and

(3) amplifying said level shifted voltage within the component.

20. The method of claim 19, wherein step (2) comprises the step of:

responding to a comparison between a common mode voltage of the input signal and a reference voltage to select the subcomponent from the plurality of subcomponents within the component to process said level shifted voltage.