Semiconductor memory device with a stacked gate including a floating gate and a control gate
First Claim
1. A semiconductor memory device comprising:
- a first to a fourth semiconductor layer of a first conductivity type which are formed in a surface region of a fifth semiconductor layer of a second conductivity type in such a manner that they are isolated from one another;
memory cells each of which includes a first MOS transistor of the second conductivity type formed on the first semiconductor layer;
a second and a third MOS transistor of the second conductivity type which are formed on the second and third semiconductor layers, respectively;
a first metal wiring layer which connects the gate of the first MOS transistor to the source or drain of at least one of the second and third MOS transistors and which is in the lowest layer of the metal wiring lines connected to the gate of the first MOS transistor; and
a first contact plug which connects the fourth semiconductor layer to the first metal wiring layer.
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Accused Products
Abstract
A semiconductor memory device comprises a first to a fourth semiconductor layer of a first conductivity type which are formed in a fifth semiconductor layer of a second conductivity type in such a manner that they are isolated from one another, memory cells each of which includes a first MOS transistor formed on the first semiconductor layer, a second and a third MOS transistor which are formed on the second and third semiconductor layers, respectively, a first metal wiring layer which connects the gate of the first MOS transistor to the source or drain of at least one of the second and third MOS transistors, and a first contact plug which connects the fourth semiconductor layer to the first metal wiring layer. The first wiring layer is in the lowest layer of the metal wiring lines connected to the gate of the first MOS transistor.
17 Citations
12 Claims
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1. A semiconductor memory device comprising:
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a first to a fourth semiconductor layer of a first conductivity type which are formed in a surface region of a fifth semiconductor layer of a second conductivity type in such a manner that they are isolated from one another;
memory cells each of which includes a first MOS transistor of the second conductivity type formed on the first semiconductor layer;
a second and a third MOS transistor of the second conductivity type which are formed on the second and third semiconductor layers, respectively;
a first metal wiring layer which connects the gate of the first MOS transistor to the source or drain of at least one of the second and third MOS transistors and which is in the lowest layer of the metal wiring lines connected to the gate of the first MOS transistor; and
a first contact plug which connects the fourth semiconductor layer to the first metal wiring layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor memory device comprising:
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a first to a third semiconductor layer of a first conductivity type which are formed in a surface region of a fourth semiconductor layer of a second conductivity type in such a manner that they are isolated from one another;
memory cells each of which includes a first MOS transistor of the second conductivity type formed on the first semiconductor layer;
a second and a third MOS transistor of the second conductivity type which are formed on the second and third semiconductor layers, respectively;
a fifth semiconductor layer of the second conductivity type formed so as to be isolated from the fourth semiconductor layer;
a sixth semiconductor layer of the first conductivity type formed in a surface region of the fifth semiconductor layer;
a first metal wiring layer which connects the gate of the first MOS transistor to the source or drain of at least one of the second and third MOS transistors and which is in the lowest layer of the metal wiring lines connected to the gate of the first MOS transistor; and
a second contact plug which connects the sixth semiconductor layer to the first metal wiring layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification