Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
First Claim
1. A method for forming a pattern comprising:
- forming a first region having a substance including a light-absorbing material;
forming a second region by modifying the surface of the first region by selectively irradiating the first region with laser light having a wavelength which is absorbed by the light-absorbing material; and
forming a pattern by discharging a compound including a pattern forming material to the second region.
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Accused Products
Abstract
It is an object of the present invention to provide a display device in which a material usability is enhanced and which can be manufactured by simplifying the manufacturing process, and a manufacturing technique thereof. It is also an object of the invention to provide a technique in which a pattern of a wiring or the like constituting these display devices can be formed to have a desired shape with preferable controllability. A method for forming a pattern according to the invention comprising the steps of: forming a first region including a light-absorbing material; forming a second region by modifying a surface of the substrate by irradiating the substance with laser light having a wavelength which is absorbed by the light-absorbing material; and forming a pattern by discharging a compound including a pattern forming material to the second region.
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Citations
30 Claims
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1. A method for forming a pattern comprising:
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forming a first region having a substance including a light-absorbing material;
forming a second region by modifying the surface of the first region by selectively irradiating the first region with laser light having a wavelength which is absorbed by the light-absorbing material; and
forming a pattern by discharging a compound including a pattern forming material to the second region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for forming a pattern comprising:
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forming a first region having a substance including a light-absorbing material;
forming a second region by modifying the surface of the first region by selectively irradiating the first region with laser light having a wavelength which is absorbed by the light-absorbing material;
removing the light-absorbing material; and
forming a pattern by discharging a compound including a pattern forming material to the second region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising:
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forming a first region having a substance including a light-absorbing material;
forming a second region by modifying the surface of the first region by selectively irradiating the first region with laser light having a wavelength which is absorbed by the light-absorbing material; and
forming a pattern by discharging a compound including a pattern forming material to the second region. - View Dependent Claims (14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device comprising:
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forming a first region having a substance including a light-absorbing material;
forming a second region by modifying the surface of the first region by selectively irradiating the first region with laser light having a wavelength which is absorbed by the light-absorbing material;
removing the light-absorbing material; and
forming a pattern by discharging a compound including a pattern forming material to the second region. - View Dependent Claims (19, 20, 21, 22)
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23. A semiconductor device comprising:
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at least one thin film transistor over a substrate, the thin film transistor comprising;
an electrode layer provided over an insulating surface having a first region and a second region, wherein the first region and the second region comprise a substance including a light-absorbing material, wherein the electrode layer is provided over the second region, and wherein the second region has higher wettability than that of the first region with respect to the electrode layer. - View Dependent Claims (24)
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25. A semiconductor device comprising:
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at least one thin film transistor over a substrate, the thin film transistor comprising;
an electrode layer provided over an insulating surface having a first region and a second region, wherein the second region comprises a substance including a light-absorbing material, wherein the electrode layer is provided over the second region, and wherein the second region has higher wettability than that of the first region with respect to the electrode layer. - View Dependent Claims (26)
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27. A television device comprising:
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a display device, the display device comprising;
a thin film transistor comprising a gate electrode layer provided over an insulating surface having a first region and a second region, wherein the first region and the second region comprise a substance including a light-absorbing material, wherein the gate electrode layer is provided over the second region, and wherein the second region has higher wettability than that of the first region with respect to the gate electrode layer. - View Dependent Claims (28)
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29. A television device comprising:
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a display device, the display device comprising;
a thin film transistor comprising a gate electrode layer provided over an insulating surface having a first region and a second region, wherein the second region comprises a substance including a light-absorbing material, wherein the gate electrode layer is provided over the second region, and wherein the second region has higher wettability than that of the first region with respect to the gate electrode layer. - View Dependent Claims (30)
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Specification