Semiconductor device and manufacturing process therefor as well as plating solution

• US 20050196959A1
• Filed: 05/09/2005
• Published: 09/08/2005
• Est. Priority Date: 04/26/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Ueno, Kazuykoshi
• Granted Patent: US 7,821,135 B2
• Time in Patent Office: Days
• US Class Current: 438/643
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53233 Copper alloys
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device of improved stress-migration resistance and reliability includes an insulating film having formed therein a lower interconnection consisting of a barrier metal film and a copper-silver alloy film, on which is then formed an interlayer insulating film. In the interlayer insulating film is formed an upper interconnection consisting of a barrier metal film and a copper-silver alloy film. The lower and the upper interconnections are made of a copper-silver alloy which contains silver in an amount more than a solid solution limit of silver to copper.

Claims

1. A semiconductor device comprising a metal region on a semiconductor substrate, wherein the metal region comprises copper and silver and has a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.

5. The semiconductor device as claimed in claim 1, wherein the metal region has a silver content equal to more than 90% of the total amount of component metals in the metal region.

6. The semiconductor device as claimed in claim 1, wherein the metal region has a silver content equal to more than 95% of the total amount of component metals in the metal region.

7. The semiconductor device as claimed in claim 1, wherein the metal region is an interconnection, plug or pad.

26. The semiconductor device as claimed in claim 1, wherein said metal region further includes at least one metal selected from the group consisting of Zn, In, Al, Ti and Sn.

2. A semiconductor device comprising a metal region on a semiconductor substrate, wherein the metal region comprises copper and silver;

and a silver content to the total amount of component metals in the metal region is more than a solid solution limit of silver to copper.

8. The semiconductor device as claimed in claim 2, wherein the metal region is an interconnection, plug or pad.

3. A semiconductor device comprising a metal region comprising copper and silver, on a semiconductor substrates wherein a maximum hysteresis error in a temperature-stress curve in the metal region is 150 MPa or less.

9. The semiconductor device as claimed in claim 3, herein the metal region is an interconnection, plug or pad.

4. A semiconductor device comprising a metal region comprising copper and silver, on a semiconductor substrates wherein a recrystallization temperature of a component metal of the metal region is 200°

C. or higher.

10. The semiconductor device as claimed in claim 4, wherein the metal region is an interconnection, plug or pad.

11-21. -21. (canceled)

22. A semiconductor device comprising a metal region on a semiconductor substrate, wherein the metal region comprises a silver-containing homogeneous metal alloy of copper and silver having a silver content equal to more than 1 wt % of the total amount of component metals in the metal region.

24. The semiconductor device as claimed in claim 22, wherein the metal region is an interconnection, plug or pad.

27. The semiconductor device as claimed in claim 22, wherein said metal region further includes at least one metal selected from the group consisting of Zn, In, Al, Ti and Sn.

23. A semiconductor device comprising a metal region on a semiconductor substrate, wherein the metal region comprises a homogenous alloy of copper and silver;

and a silver content to the total amount of component metals in the metal region is more than a solid solution limit of silver to copper.

25. The semiconductor device as claimed in claim 23, wherein the metal region is an interconnection, plug or pad.