System and method for removal of photoresist and residues following contact etch with a stop layer present

• US 20050196967A1
• Filed: 01/19/2005
• Published: 09/08/2005
• Est. Priority Date: 01/20/2004
• Status: Active Grant

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Savas, Stephen E., Helle, Wolfgang
• Granted Patent: US 7,361,605 B2
• Time in Patent Office: Days
• US Class Current: 438/700
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one contact opening is associated with each contact. Stripping of the patterned layer of photoresist and related residues is performed. After stripping, the stop layer is removed from the contacts. In one feature, the stop layer is removed from the contacts by etching the stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen. In another feature, the photoresist is stripped after the stop layer is removed. Stripping the patterned layer of photoresist and the related residues is performed, in this case, using a plasma that is formed predominantly including hydrogen without oxygen.

Claims

1. In an overall technique for fabricating an integrated circuit on a wafer having an active device structure, during which fabrication, a patterned layer of photoresist is formed on an overall insulation layer that is itself supported directly on a stop layer that is, in turn, supported directly on the active device structure for use in etching contact openings to reach a contact arrangement that is defined by the active device structure in which each contact of a plurality of contacts is covered by said stop layer, a method, comprising:

selectively etching, using a first plasma in cooperation with the patterned layer of photoresist, to form a plurality of contact openings through said overall insulation layer such that one contact opening is associated with each contact in a way which at least partially exposes the stop layer above each contact and which, at least potentially, produces etch related residues;

stripping said patterned layer of photoresist and said related residues; and

after stripping, removing said stop layer from said contacts.

2. The method of claim 1 wherein said stripping is performed using a second plasma formed from a plasma gas input that includes hydrogen.

3. The method of claim 2 wherein said plasma gas input includes up to approximately 10% of a nitrogen containing gas.

4. The method of claim 2 wherein said plasma gas input includes up to approximately 5% of a fluorine containing gas.

5. The method of claim 2 wherein said plasma gas input includes hydrogen gas with approximately 10% nitrogen containing gas and about 2% of a fluorinated gas.

6. The method of claim 5 wherein said fluorinated gas is carbon tetrafluoride.

7. The method of claim 5 wherein said plasma gas input includes helium.

8. The method of claim 2 wherein said second plasma is substantially nitrogen free.

9. The method of claim 2 wherein said second plasma is substantially oxygen free.

10. The method of claim 1 wherein said stop layer is formed from silicon nitride.

11. The method of claim 1 in which each contact includes a silicide and said removing of the stop layer is performed using a second plasma that is formed predominantly from hydrogen gas in an absence of oxygen.

12. The method of claim 1 wherein removing includes performing at least a concluding portion of the removal of said stop layer by forming said second plasma using only pure hydrogen.

13. The method of claim 11 wherein an initial portion of said removing includes forming said second plasma using a fluorinated gas in combination with said hydrogen gas.

14. The method of claim 1 wherein removing includes performing at least a concluding portion of the removal of said stop layer by forming said second plasma using a combination of only pure hydrogen and helium.

15. The method of claim 1 wherein said removing using the second plasma is performed using ion bombardment to anisotropically remove the stop layer.

17. The method of claim 1 wherein at least a portion of said stripping is performed using a plasma that is generated using an input gas mixture consisting of hydrogen.

25. The method of claim 1 wherein removing includes performing at least a concluding portion of the removal of said stop layer by forming said second plasma using only pure hydrogen.

26. The method of claim 11 wherein an initial portion of said removing includes forming said second plasma using a fluorinated gas in combination with said hydrogen gas.

16. In an overall technique for fabricating an integrated circuit on a wafer having an active device structure, during which fabrication, a patterned layer of photoresist is formed on an overall insulation layer that is itself supported directly on a silicon nitride stop layer that is, in turn, supported directly on the active device structure for use in etching at least one contact opening to reach a silicide containing contact which is defined by the active device structure and covered by the stop layer, a method, comprising:

selectively etching, using a first plasma in cooperation with the patterned layer of photoresist, to form a contact opening through said overall insulation layer such that the contact opening is associated with said contact in a way which at least partially exposes the stop layer above the contact and which, at least potentially, produces etch related residues;

stripping said patterned layer of photoresist and said related residues; and

after stripping, removing said stop layer from said contacts using a second plasma that is formed predominantly from hydrogen gas in an absence of oxygen, said second plasma being formed from a plasma gas input that includes (i) hydrogen gas, (ii) a nitrogen containing gas in an amount up to approximately 10% of the plasma gas input, and (iii) a fluorine containing gas up to approximately 5% of the plasma gas input.

18. In an overall technique for fabricating an integrated circuit on a wafer having an active device structure and as part of an intermediate step a contact, which includes a silicide and which forms part of the active device structure, is protected by a stop layer, a method for removing said stop layer from the contact, said method comprising:

etching said stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen to remove the stop layer from said contact.

19. The method of claim 18 including completing said etching of the stop layer using pure hydrogen gas as said plasma gas input.

20. The method of claim 18 including completing said etching of the stop layer using helium along with hydrogen as said plasma gas input.

21. The method of claim 18 including performing said etching anisotropically.

22. The method of claim 18 wherein said plasma gas input includes a fluorine containing gas.

23. The method of claim 22 wherein said fluorine containing gas is selected as at least one member of the group consisting of a fluorocarbon, SiF₄ , NF₃ and SF₆.

24. In an overall technique for fabricating an integrated circuit on a wafer having an active device structure, during which fabrication, a patterned layer of photoresist is formed on an overall insulation layer that is itself supported directly on a stop layer that is, in turn, supported directly on the active device structure for use in etching at least one contact opening to reach a silicide containing contact which is defined by the active device structure and covered by the stop layer, a method, comprising:

selectively etching, using a plasma in cooperation with the patterned layer of photoresist, to form a contact opening through said overall insulation layer such that the contact opening is associated with said contact in a way which at least partially exposes the stop layer above the contact and which, at least potentially, produces etch related residues;

removing said stop layer from said contacts using a second plasma that is formed predominantly from hydrogen gas in an absence of oxygen; and

stripping said patterned layer of photoresist and said related residues using a third plasma that is formed predominantly including hydrogen without oxygen.

27. The method of claim 24 wherein removing includes performing at least a concluding portion of the removal of said stop layer by forming said second plasma using a combination of only pure hydrogen and a noble gas.

28. The method of claim 24 wherein stripping includes using hydrogen in combination with nitrogen to form said third plasma.

29. The method of claim 28 wherein said third plasma is formed from a gas mixture including no more that approximately 5% nitrogen.

30. The method of claim 24 including removing said removing residues as one part of of said stripping by adding fluorine to said third plasma.