Method for manufacturing an electro-optical device

• US 20050197031A1
• Filed: 03/14/2005
• Published: 09/08/2005
• Est. Priority Date: 06/04/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Yamamoto, Kunitaka, Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,462,501 B2
• Time in Patent Office: Days
• US Class Current: 445/24
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/146 poly N-vinylcarbazol; Derivatives thereof
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/346 comprising platinum
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 Aromatic compounds comprising a hetero atom

Abstract

An object of the present invention is to provide an EL display device having high operation performance and reliability.

A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Claims

1. A method for manufacturing an electro-optical device comprising:

forming a thin film transistor having multi-gate structure on an insulating surface;

forming a passivation film over the thin film transistor;

forming a first electrode over the passivation film, the first electrode electrically connected to the thin film transistor;

forming an EL layer over the first electrode through an ink jet method; and

forming a second electrode over the EL layer.

2. The method according to claim 1, wherein the thin film transistor functions as a switching element.

3. The method according to claim 1, further comprising:

forming a bank comprising a resin over the first electrode.

4. The method according to claim 1, wherein the EL layer comprises an organic material.

5. The method according to claim 1, wherein the ink jet method uses a piezo element.

6. The method according to claim 1, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

7. The method according to claim 1, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

8. The method according to claim 1, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein the first electrode is in contact with side surfaces of the contact hole and edges of the passivation film.

9. A method for manufacturing an electro-optical device comprising:

forming a thin film transistor having multi-gate structure on an insulating surface;

forming a passivation film over the thin film transistor;

forming a first electrode over the passivation film, the first electrode electrically connected to the thin film transistor;

forming an EL layer over the first electrode through an ink jet method; and

forming a second electrode over the EL layer,

wherein the EL layer and the second electrode are continuously formed without opening to an air.

10. The method according to claim 9, wherein the thin film transistor functions as a switching element.

11. The method according to claim 9, further comprising:

forming a bank comprising a resin over the first electrode.

12. The method according to claim 9, wherein the EL layer comprises an organic material.

13. The method according to claim 9, wherein the ink jet method uses a piezo element.

14. The method according to claim 9, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

15. The method according to claim 9, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

16. The method according to claim 9, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein the first electrode is in contact with side surfaces of the contact hole and edges of the passivation film.

17. A method for manufacturing an electro-optical device comprising:

forming a thin film transistor having multi-gate structure on an insulating surface;

forming a first passivation film over the thin film transistor;

forming a first electrode over the passivation film, the first electrode electrically connected to the thin film transistor;

forming an EL layer over the first electrode through an ink jet method;

forming a second electrode over the EL layer; and

forming a second passivation film over the second electrode.

18. The method according to claim 17, wherein the thin film transistor functions as a switching element.

19. The method according to claim 17, further comprising:

forming a bank comprising a resin over the first electrode.

20. The method according to claim 17, wherein the EL layer comprises an organic material.

21. The method according to claim 17, wherein the ink jet method uses a piezo element.

22. The method according to claim 17, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

23. The method according to claim 17, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

24. The method according to claim 17, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein the first electrode is in contact with side surfaces of the contact hole and edges of the passivation film.

25. A method for manufacturing an electro-optical device comprising:

forming a thin film transistor having multi-gate structure on an insulating surface;

forming a first passivation film over the thin film transistor;

forming a first electrode over the passivation film, the first electrode electrically connected to the thin film transistor;

forming an EL layer over the first electrode through an ink jet method;

forming a second electrode over the EL layer; and

forming a second passivation film over the second electrode,

wherein the EL layer, the second electrode and the second passivation film are continuously formed without opening to an air.

26. The method according to claim 25, wherein the thin film transistor functions as a switching element.

27. The method according to claim 25, further comprising:

forming a bank comprising a resin over the first electrode.

28. The method according to claim 25, wherein the EL layer comprises an organic material.

29. The method according to claim 25, wherein the ink jet method uses a piezo element.

30. The method according to claim 25, wherein the second electrode comprises at least one selected from the group consisting of magnesium (Mg), lithium (Li), cesium (Cs), barium (Ba), potassium (K), beryllium (Be), and calcium (Ca).

31. The method according to claim 25, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein an upper diameter of the contact hole is longer length than a lower diameter of the contact hole.

32. The method according to claim 25, further comprising:

forming a contact hole in the passivation film and at least one insulating film in the thin film transistor,

wherein the first electrode is in contact with side surfaces of the contact hole and edges of the passivation film.