Light-emitting diode with micro-lens layer

• US 20050199898A1
• Filed: 12/23/2004
• Published: 09/15/2005
• Est. Priority Date: 03/12/2004
• Status: Abandoned Application

• Current Assignee: Opto Tech Corporation (OptoTech Corp.)
• Original Assignee: Opto Tech Corporation (OptoTech Corp.)
• Inventors: Lin, San Bao, Lin, Ming-Der
• Application Number:
  US11/019,170
• Publication Number:
  US 20050199898A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

A light-emitting diode with a micro-lens layer, includes a die substrate, a second epitaxy layer deposited on the top surface of the die substrate, a first epitaxy layer deposited on a portion of the top surface of the second epitaxy layer, a second electrode formed on a portion of the top surface of the second epitaxy layer, a first electrode formed on a portion of the top surface of the first epitaxy layer, and a micro-lens layer mounted on a portion of the top surface of the first epitaxy layer. The micro-lens layer can change the projection angle and the projection path of the light beams radiated within the light-emitting diode in virtue of the diffusion effect caused by the micro-lens, and thereby improving the light-drawing efficiency and the luminance of the light-emitting diode.

Claims

1. A light-emitting diode with a micro-lens layer, comprising:

a die substrate;

a second epitaxy layer deposited on the top surface of the die substrate;

at least one first epitaxy layer deposited on a portion of the top surface of the second epitaxy layer;

at least one first electrode fixedly formed on a portion of the top surface of the first epitaxy layer;

at least one second electrode fixedly formed on the other portion of the top surface of the second epitaxy layer; and

at least one micro-lens layer formed on the other portion of the top surface of the first epitaxy layer for allowing the light beams radiated within the light-emitting diode to change their projection angle or projection path by a diffusion effect caused by the micro-lens layer.

2. The light-emitting diode according to claim 1, wherein the top surface of the micro-lens layer is coated with a reflective layer.

3. The light-emitting diode according to claim 1, further comprising a carrier substrate for allowing the light-emitting diode to be fixedly mounted thereon.

4. The light-emitting diode according to claim 3, wherein the light-emitting diode is fixedly mounted on the carrier substrate by flip-chip mounting.

5. The light-emitting diode according to claim 1, wherein the micro-lens layer is formed by the same material as the first epitaxy layer.

6. The light-emitting diode according to claim 1, wherein the micro-lens layer is formed by a conductor or an insulator.

7. The light-emitting diode according to claim 6, wherein the micro-lens layer is formed by one or an alloy of a group of materials consisting of silicon dioxide, titanium dioxide, and silicon nitride.

8. The light-emitting diode according to claim 6, wherein the micro-lens layer is formed by indium tin oxide.

9. The light-emitting diode according to claim 1, further comprising a second micro-lens layer fixedly mounted on the bottom surface of a light-emitting die of the light-emitting diode.

10. The light-emitting diode according to claim 3, further comprising a reflective layer mounted on one side of the carrier substrate.

11. The light-emitting diode according to claim 6, wherein the micro-lens layer is constituted by a plurality of protuberances having a curve surface.