Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

• US 20050201023A1
• Filed: 04/25/2005
• Published: 09/15/2005
• Est. Priority Date: 08/06/2002
• Status: Active Grant

• Current Assignee: Samsung Semiconductor Incorporated (Samsung Electronics Co. Ltd.)
• Original Assignee: Paul P. Nguyen, Yiming Huai
• Inventors: Nguyen, Paul P., Huai, Yiming
• Granted Patent: US 7,106,624 B2
• Time in Patent Office: Days
• US Class Current: 360/324.110
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01F 10/3263 the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32

Abstract

A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.

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39. A magnetic element comprising:

a first pinned layer, the pinned layer being ferromagnetic and including a first magnetization, the first magnetization being pinned in a first direction;

a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive;

a free layer, the nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization;

a barrier layer, the barrier layer being an insulator and having a thickness that allows electron tunneling through the barrier layer;

a second pinned layer, the second pinned layer being ferromagnetic and including a fourth magnetization pinned in a second direction substantially the same as the first direction, the barrier layer being between the free layer and the second pinned layer;

wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plane mode.

40. The magnetic element of claim 39 wherein the second magnetization and the third magnetization are antiferromagnetically aligned.

41. The magnetic element of claim 39 further comprising:

a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and

a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the fourth magnetization of the second pinned layer.

42. The magnetic element of claim 39 wherein the first pinned layer is a synthetic pinned layer including a third ferromagnetic layer and a fourth ferromagnetic layer separated by a second nonmagnetic conductive layer, the third ferromagnetic layer being closer to the free layer than the fourth ferromagnetic layer, the third ferromagnetic layer having the first magnetization, the fourth ferromagnetic layer having a fifth magnetization.

43. The magnetic element of claim 42 wherein the first magnetization and the fifth magnetization are antiferromagnetically aligned.

44. The magnetic element of claim 42 further comprising:

a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the fifth magnetization of the fourth ferromagnetic layer; and

a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the fourth magnetization of the second pinned layer.

45. The magnetic element of claim 39 wherein the second pinned layer is a synthetic pinned layer including a third ferromagnetic layer and a fourth ferromagnetic layer separated by a second nonmagnetic conductive layer, the third ferromagnetic layer being closer to the free layer than the fourth ferromagnetic layer, the third ferromagnetic layer having the fourth magnetization, the fourth ferromagnetic layer having a fifth magnetization.

46. The magnetic element of claim 45 wherein the fourth magnetization and the fifth magnetization are antiferromagnetically aligned.

47. The magnetic element of claim 45 further comprising:

a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and

a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the fifth magnetization of the fourth ferromagnetic layer.

48. The magnetic element of claim 45 wherein the first pinned layer is a synthetic pinned layer including a fifth ferromagnetic layer and a sixth ferromagnetic layer separated by a third nonmagnetic conductive spacer layer, the fifth ferromagnetic layer being closer to the free layer than the sixth ferromagnetic layer, the fifth ferromagnetic layer having the first magnetization, the sixth ferromagnetic layer having a sixth magnetization.

49. The magnetic element of claim 48 wherein the first magnetization and the sixth magnetization are antiferromagnetically aligned.

50. The magnetic element of claim 48 further comprising:

a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the sixth magnetization of the sixth ferromagnetic layer; and

a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the fifth magnetization of the fourth ferromagnetic layer.

51. The magnetic element of claim 39 wherein the magnetic element has a width of less than or equal to 200 nm.

52. The magnetic element of claim 51 wherein the magnetic element has a width of approximately 100 nm.

53. The magnetic element of claim 52 wherein the magnetic element has a depth of approximately 50 nm.

54. A magnetic element comprising:

a first pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;

a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive;

a free layer, the nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization;

wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plane mode.

55. A magnetic element comprising:

a first pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;

a nonmagnetic spacer layer, the nonmagnetic spacer layer being an insulating barrier layer;

a free layer, the nonmagnetic spacer layer residing between the first pinned layer and the free layer, the free layer being synthetic and including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic conductive layer between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer having a second magnetization, the second ferromagnetic layer having a third magnetization;

wherein the magnetic element is configured to allow at least one of the second magnetization and the third magnetization of the free layer to change direction due to spin transfer switching when a write current is passed through the magnetic element in current-perpendicular-to-the-plan mode; and

wherein the magnetic element is configured to have a low resistance-area product, Ra.

56. The magnetic element of claim 55 wherein the low resistance-area product value is not more than fifty Ω

μ

m².

57. The magnetic element of claim 55 wherein the low resistance-area product value is not more than ten Ω

μ

m².