Method for processing oxide-confined VCSEL semiconductor devices
First Claim
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11. A method of fabricating a VCSEL comprising:
- forming a semiconductor device structure with a first stack of mirrors and a second stack of mirrors with an active area sandwiched therebetween, the second stack of mirrors being a mesa structure having an upper surface and outer sidewalls;
forming at least one oxide region extending into the sidewalls of the mesa structure, including a strain induced region; and
etching the sidewalls of the mesa structure to remove at least a portion of said strain induced region.
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Abstract
A method of manufacturing a vertical cavity surface emitting laser on a substrate by forming a first parallel stack of mirrors on the substrate; forming an active and spacer layer on the first parallel mirror stack; and forming a second parallel mirror stack on the active and spacer layer. The second parallel mirror stack is then etched to define a structure; followed by oxidizing the peripheral sidewalls of the structure to form a current-confining central region in the structure; and etching at least a portion of the outer sidewalls of the structure to remove oxidized material.
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13 Claims
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11. A method of fabricating a VCSEL comprising:
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forming a semiconductor device structure with a first stack of mirrors and a second stack of mirrors with an active area sandwiched therebetween, the second stack of mirrors being a mesa structure having an upper surface and outer sidewalls;
forming at least one oxide region extending into the sidewalls of the mesa structure, including a strain induced region; and
etching the sidewalls of the mesa structure to remove at least a portion of said strain induced region.
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12. A surface emitting laser comprising:
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a substrate having top and bottom surfaces;
a first stack of mirror layers located upon said substrate top surface, said first stack layers of alternating indices of refraction;
an active layer located upon said first stack, said active layer having a mesa extending above an adjacent base layer portion of said active layer;
a second stack of mirror layers located upon a top surface of said mesa, said second stack layers of alternating indices of refraction; and
an etched oxide layer located peripherally about said mesa and upon said adjacent base layer portion immediate said mesa.
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13. A method of manufacturing a vertical cavity surface emitting laser comprising:
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providing a substrate;
forming a first parallel stack of mirrors on the substrate;
forming an active and spacer layer on the first parallel mirror stack;
forming a second parallel mirror stack on the active and spacer layer;
etching at least the second parallel mirror stack to define a structure;
oxidizing the peripheral sidewalls of the structure to form a current-confining central region in the structure; and
etching at least a portion of the outer sidewalls of the structure to remove oxidized material.
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Specification