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Method for processing oxide-confined VCSEL semiconductor devices

  • US 20050201436A1
  • Filed: 03/15/2004
  • Published: 09/15/2005
  • Est. Priority Date: 03/15/2004
  • Status: Abandoned Application
First Claim
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11. A method of fabricating a VCSEL comprising:

  • forming a semiconductor device structure with a first stack of mirrors and a second stack of mirrors with an active area sandwiched therebetween, the second stack of mirrors being a mesa structure having an upper surface and outer sidewalls;

    forming at least one oxide region extending into the sidewalls of the mesa structure, including a strain induced region; and

    etching the sidewalls of the mesa structure to remove at least a portion of said strain induced region.

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