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Plating method

  • US 20050202346A1
  • Filed: 03/04/2005
  • Published: 09/15/2005
  • Est. Priority Date: 03/11/2004
  • Status: Active Grant
First Claim
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1. A plating method, comprising the steps of:

  • forming a conductive layer on a semiconductor wafer;

    forming a negative resist layer on the conductive layer;

    exposing a center portion of the negative resist layer;

    exposing a peripheral region of the negative resist layer after the step of exposing the center portion of the negative resist layer;

    developing the exposed negative resist layer to form a predetermined plating pattern; and

    performing plating on the plating pattern.

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