×

Plasma ion implantation system

  • US 20050202624A1
  • Filed: 04/01/2004
  • Published: 09/15/2005
  • Est. Priority Date: 03/12/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A plasma ion implantation system comprising:

  • a vacuum chamber;

    a plasma generator configured to generate ions in the vacuum chamber;

    a sample holder inside the vacuum chamber; and

    a voltage source configured to provide a bias voltage between the sample holder and the vacuum chamber to attract ions to implant in a high-k dielectric layer of a sample positioned on the sample holder.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×