Semiconductor dynamic quantity sensor

• US 20050204816A1
• Filed: 03/10/2005
• Published: 09/22/2005
• Est. Priority Date: 03/22/2004
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Tokunaga, Masatoshi
• Granted Patent: US 7,210,348 B2
• Time in Patent Office: Days
• US Class Current: 73/504.160
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

A semiconductor dynamic quantity sensor includes moving parts displaceable in a predetermined direction over a supporting substrate and a beam portion for connecting said supporting substrate and said moving parts. The beam portion includes beams arranged in parallel and connected together at first end portions by a connecting portion. The beams bend in a direction perpendicular to the longitudinal direction of said beams. Outer side beams have an equal length and are fixed at other end portions to said supporting substrate. The moving parts are connected to the other end portion of another beam. The outer side beams and connecting portion have a parameter (A/B)/(T/L) equal to at least 20.

Claims

1. A semiconductor dynamic quantity sensor formed in a semiconductor layer supported over a supporting substrate, comprising:

moving parts displaceable in a predetermined direction over said supporting substrate; and

a beam portion for connecting said supporting substrate and said moving parts,

wherein said beam portion includes at least three beams arranged in parallel and connected together at first end portions by a connecting portion, wherein said beams bend in a direction perpendicular to the longitudinal direction of said beams,

wherein two outer side beams of said at least three beams have an equal length and are fixed at an other end portions to said supporting substrate,

wherein said moving parts are connected to the other end portion of another beam not among said two outer side ones of said at least three beams, and

wherein the two outer side beams and said connecting portion have a parameter (A/B)/(T/L) equal to at least 20, wherein L represents a length of the two outer side beams in said beam portion, T represents a width of said two outer side beams, B represents a width of said connecting portion in said beam portion, and A represents a thickness of said connecting portion.

2. A semiconductor dynamic quantity sensor according to claim 1, wherein said parameter (A/B)/(T/L) is at least 30.

3. A semiconductor dynamic quantity sensor according to claim 2, wherein all of said at least three beams in said beam portion have an equal length.

4. A semiconductor dynamic quantity sensor according to claim 1, wherein all of said at least three beams in said beam portion have an equal length.