Plasma processing apparatus and control method thereof
First Claim
1. A plasma processing apparatus, comprising:
- a lower electrode disposed in a processing chamber, capable of mounting an object to be processed thereon;
an upper electrode disposed in the chamber to face the lower electrode;
a first high-frequency power supply for applying high-frequency power to the upper electrode;
a second high-frequency power supply for applying high-frequency power to the lower electrode;
an output controller for raising stepwise, respective outputs of the high-frequency power supplies up to respective set levels for processing the object to be processed in at least three steps, wherein the output controller regulates raise timings of the outputs of the respective high-frequency power supplies so that raising the output of the second high-frequency power supply is followed by raising the output of the first high-frequency power supply, while the outputs of the high-frequency power supplies are raised stepwise up to the respective set levels.
1 Assignment
0 Petitions
Accused Products
Abstract
There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.
25 Citations
24 Claims
-
1. A plasma processing apparatus, comprising:
-
a lower electrode disposed in a processing chamber, capable of mounting an object to be processed thereon;
an upper electrode disposed in the chamber to face the lower electrode;
a first high-frequency power supply for applying high-frequency power to the upper electrode;
a second high-frequency power supply for applying high-frequency power to the lower electrode;
an output controller for raising stepwise, respective outputs of the high-frequency power supplies up to respective set levels for processing the object to be processed in at least three steps, wherein the output controller regulates raise timings of the outputs of the respective high-frequency power supplies so that raising the output of the second high-frequency power supply is followed by raising the output of the first high-frequency power supply, while the outputs of the high-frequency power supplies are raised stepwise up to the respective set levels. - View Dependent Claims (3, 4, 5, 6)
-
-
2. A plasma processing apparatus, comprising:
-
a lower electrode disposed in a processing chamber, capable of mounting an object to be processed thereon;
an upper electrode disposed in the chamber to face the lower electrode;
a first and a second high-frequency power supply for applying high-frequency power to the lower electrode;
an output controller for raising stepwise, respective outputs of the high-frequency power supplies up to respective set levels for processing the object to be processed in at least three steps, wherein the output controller regulates raise timings of the outputs of the respective high-frequency power supplies so that raising the output of the second high-frequency power supply is followed by raising the output of the first high-frequency power supply, while the outputs of the high-frequency power supplies are raised stepwise up to the respective set levels.
-
-
7. A plasma processing apparatus, comprising:
-
a lower electrode disposed in a processing chamber, capable of mounting an object to be processed thereon;
an upper electrode disposed in the chamber to face the lower electrode;
a first and a second high-frequency power supply for applying high-frequency power to the electrodes;
an output controller for continuously raising respective outputs of the high-frequency power supplies to respective set levels for processing the object to be processed or for raising the respective outputs of the high-frequency power supplies to the respective set levels stepwise during a certain interval and continuously during the rest. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. A method for controlling a plasma processing apparatus including a lower electrode in a processing chamber on which an object to be processed is mounted, an upper electrode disposed in the chamber to face the lower electrode, a first high-frequency power supply for applying a high-frequency power to the upper electrode and a second high-frequency power supply for applying a high-frequency power to the lower electrode, comprising the steps of:
-
raising respective outputs of the high-frequency power supplies at least three times stepwise to reach respective set levels for processing the object to be processed; and
controlling respective raise timings of the outputs of the high-frequency power supplies so that raising the output of the second high-frequency power supply is followed by raising the output of the first high-frequency power supply while the respective outputs of the high-frequency power supplies are raised to the respective set levels. - View Dependent Claims (15, 16, 17, 18)
-
-
14. A method for controlling a plasma processing apparatus including a lower electrode in a processing chamber on which an object to be processed is mounted, an upper electrode disposed to face the lower electrode and a first and a second high-frequency power supply for applying high-frequency powers to the lower electrode, comprising the steps of:
-
raising respective outputs of the high-frequency power supplies at least three times stepwise to reach respective set levels for processing the object to be processed; and
controlling respective raise timings of the outputs of the high-frequency power supplies so that raising the output of the second high-frequency power supply is followed by raising the output of the first high-frequency power supply while the respective outputs of the high-frequency power supplies are raised to the respective set levels.
-
- 19. A method for controlling a plasma processing apparatus including a lower electrode in a processing chamber on which an object to be processed is mounted, an upper electrode disposed in the chamber to face the lower electrode and a first and a second high-frequency power supply for applying high-frequency powers to the electrodes, comprising the step of continuously raising respective outputs of the high-frequency power supplies to respective set levels for processing the object to be processed or for raising the respective outputs of the high-frequency power supplies to the respective set levels stepwise during a certain interval and continuously during the rest.
Specification