Photonic crystal light emitting device
First Claim
1. A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and
a photonic crystal structure formed in at least a portion of the n-type region; and
a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.
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Accused Products
Abstract
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
132 Citations
37 Claims
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1. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and
a photonic crystal structure formed in at least a portion of the n-type region; and
a reflector disposed on at least a portion of a surface of the p-type region opposite the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method of forming a semiconductor light emitting device, the method comprising:
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growing a III-nitride semiconductor structure on a growth substrate, the III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region;
bonding the III-nitride semiconductor structure to a host substrate;
removing the growth substrate; and
forming a photonic crystal structure in the n-type region of the III-nitride semiconductor structure. - View Dependent Claims (35, 36, 37)
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Specification