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Strained germanium-on-insulator device structures

  • US 20050205934A1
  • Filed: 05/11/2005
  • Published: 09/22/2005
  • Est. Priority Date: 06/07/2002
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a substrate having a dielectric layer disposed thereon; and

    a strained semiconductor layer disposed in contact with the dielectric layer, wherein the strained semiconductor layer comprises germanium.

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