Radiation-emitting semiconductor component

• US 20050207461A1
• Filed: 01/31/2005
• Published: 09/22/2005
• Est. Priority Date: 01/30/2004
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Philippens, Marc, Albrecht, Tony
• Granted Patent: US 7,620,087 B2
• Time in Patent Office: Days
• US Class Current: 372/43.10
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01S 2301/18 Semiconductor lasers with special structural design for influencing the near- or far-field
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18386 Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface

Abstract

A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ₁ (11) and the second active zone being provided for generating a radiation having a second wavelength λ₂ (22), the radiation having the first wavelength λ₁ being coherent and the radiation having the second wavelength λ₂ being incoherent.

Claims

1. A radiation-emitting semiconductor component, comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged downstream of the first active zone in the vertical direction, the first active zone being provided for generating a radiation having a first wavelength λ

₁ (11) and the second active zone being provided for generating a radiation having a second wavelength λ

₂ (22),

wherein

the radiation having the first wavelength λ

₁ is coherent and the radiation having the second wavelength λ

₂ is incoherent.

2. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the first active zone and the second active zone are monolithically integrated into the semiconductor body.

3. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the second active zone is arranged in the beam path of the radiation having the wavelength λ

₁.

4. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the wavelength λ

₁ is greater than the wavelength λ

₂.

5. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the wavelength λ

₁ lies in the non-visible spectral range.

6. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the wavelength λ

₂ lies in the visible spectral range.

7. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the first active zone is formed in a semiconductor structure (4) comprising an optical resonator (7).

8. The radiation-emitting semiconductor component as claimed in claim 7,

wherein

the semiconductor structure is formed in accordance with a semiconductor component with a vertical emission direction, in particular a vertically emitting laser.

9. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the second active zone is formed in an LED structure (8).

10. The radiation-emitting semiconductor component as claimed in claim 7,

wherein

the second active zone is formed in an LED structure (8).

11. The radiation-emitting semiconductor component as claimed in claim 10,

wherein

the LED structure is connected to the semiconductor structure via a connecting layer (10).

12. The radiation-emitting semiconductor component as claimed in claim 11,

wherein

the connecting layer comprises a tunnel junction (12, 13) that electrically conductively connects the LED structure and the semiconductor structure.

13. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the first and second active zones are formed such that they are jointly electrically drivable.

14. The radiation-emitting semiconductor component as claimed in claim 11,

wherein

the first and second active zones are formed such that they are jointly electrically drivable.

15. The radiation-emitting semiconductor component as claimed in claim 11,

wherein

the connecting layer comprises a barrier junction that electrically insulates the LED structure from the semiconductor structure.

16. The radiation-emitting semiconductor component as claimed in claim 14,

wherein

the connecting layer comprises a barrier junction that electrically insulates the LED structure from the semiconductor structure.

17. The radiation-emitting semiconductor component as claimed in claim 1,

wherein

the first and second active zones are formed such that they are electrically drivable separately from one another.

18. The radiation-emitting semiconductor component as claimed in claim 11,

wherein

the first and second active zones are formed such that they are electrically drivable separately from one another.