Oxide film forming method and oxide film forming apparatus
First Claim
1. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of two components, a raw gas (A) and a reactive gas (B);
discharge processing the process gas (B) out of the process gases (A) and (B) of two components; and
joining the process gas (A) not discharge processed with said process gas (B) discharge processed in the vicinity of the surface of a substrate to mix them.
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Abstract
An apparatus for forming an oxide film on the surface of a substrate S by a CVD method under the pressure conditions close to the atmospheric pressure, comprising: gas supply sources 3A, 3B for supplying process gases of two components, a raw gas (A) comprising a silicon-contained gas such as TMOS, MTMOS or the like, and a reactive gas (B) comprising an oxidizing gas such as O2, N2O or the like, and a discharge processing section 1. The process gas (A) is mixed, in the vicinity of the surface of a substrate without discharge processing, with the process gas (B) discharge processed in the discharge processing section 1, whereby in the CVD method under normal pressure, an oxide film which is excellent in membranous and coverage property is formed at a fast film forming speed. More preferably, a H2O gas discharge processed or not discharge processed is mixed.
203 Citations
29 Claims
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1. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of two components, a raw gas (A) and a reactive gas (B);
discharge processing the process gas (B) out of the process gases (A) and (B) of two components; and
joining the process gas (A) not discharge processed with said process gas (B) discharge processed in the vicinity of the surface of a substrate to mix them. - View Dependent Claims (9, 10, 11)
- using process gases of two components, a raw gas (A) and a reactive gas (B);
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2. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
discharge processing the process gas (B) out of the process gases (A) to (C) of three components; and
joining the process gas (A) and process gas (C) not discharge processed with said process gas (B) discharge processed in the vicinity of the surface of a substrate to mix them.
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
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3. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
individually discharge processing the process gas (B) and process gas (C) out of the process gases (A) to (C) of three components; and
joining the process gas (A) not discharge processed with said process gas (B) and process gas (C) discharge processed in the vicinity of the surface of a substrate to mix them.
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
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4. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
discharge processing a mixed gas having the process gas (B) and process gas (C) mixed out of the process gases (A) to (C) of three components; and
joining the process gas (A) not discharge processed with said mixed gas discharge processed in the vicinity of the surface of a substrate to mix them.
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
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5. A method for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the method comprising:
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
discharge processing the process gas (B) out of the process gases (A) to (C) of three components; and
joining a mixed gas of the process gas (A) and process gas (C) not discharge processed with said process gas (B) discharge processed in the vicinity of the surface of a substrate to mix them.
- using process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C);
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12. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the apparatus comprising:
- a gas supply source for supplying process gases of two components, a raw gas (A) and a reactive gas (B), and a discharge processing section, wherein the process gas (B) out of the process gases (A) and (B) of two components is subjected to discharge processing by the discharge processing section; and
the process gas (A) is joined, in the vicinity of the surface of a substrate, without discharge processing, with the process gas (B) discharge processed to mix them, in the discharge processing section. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
- a gas supply source for supplying process gases of two components, a raw gas (A) and a reactive gas (B), and a discharge processing section, wherein the process gas (B) out of the process gases (A) and (B) of two components is subjected to discharge processing by the discharge processing section; and
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13. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the apparatus comprising:
- a gas supply source for supplying process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein the process gas (B) out of the process gases (A) to (C) of three components is subjected to discharge processing by the discharge processing section; and
the process gas (A) and the process gas (C) are joined, in the vicinity of the surface of a substrate, without discharge processing, with the process gas (B) discharge processed to mix them.
- a gas supply source for supplying process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein the process gas (B) out of the process gases (A) to (C) of three components is subjected to discharge processing by the discharge processing section; and
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14. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the apparatus comprising:
- a gas supply source for supplying process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein the process gas (B) and process gas (C) out of the process gases (A) to (C) of three components are subjected to discharge processing in individual discharge processing section, and the process gas (A) is joined, without discharge processing, with said process gas (B) and process gas (C) discharge processed in the vicinity of the surface of a substrate to mix them.
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15. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the apparatus comprising:
- a gas supply source for supplying process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein a mixed gas having the process gas (B) and process gas (C) mixed out of the process gases (A) to (C) of three components is subjected to discharge processing by the discharge processing section; and
the process gas (A) is joined, in the vicinity of the surface of a substrate, without discharge processing, with the mixed gas discharge processed to mix them. - View Dependent Claims (6, 7, 8)
- a gas supply source for supplying process gases of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein a mixed gas having the process gas (B) and process gas (C) mixed out of the process gases (A) to (C) of three components is subjected to discharge processing by the discharge processing section; and
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16. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under the pressure conditions close to the atmospheric pressure, the apparatus comprising:
- a gas supply source for supplying process gases of of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein the process gas (B) out of the process gases (A) to (C) of three components is subjected to discharge processing in the discharge processing section; and
the mixed gas of the process gas (A) and the process gas (C) is joined, in the vicinity of the surface of a substrate, without discharge processing, with the process gas (B) discharge processed to mix them.
- a gas supply source for supplying process gases of of three components, a raw gas (A), a reactive gas (B) and a H2O gas (C), and a discharge processing section, wherein the process gas (B) out of the process gases (A) to (C) of three components is subjected to discharge processing in the discharge processing section; and
Specification