Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
First Claim
1. A thin-film formation apparatus comprising:
- a reaction chamber to be evacuated;
a placing portion for placing a substrate thereon inside said reaction chamber;
a gas-dispersion guide disposed above said placing portion for supplying a gas onto a surface of said substrate;
a gas-supply port for introducing a gas into said gas-dispersion guide;
a gas-dispersion plate disposed on a substrate side of said gas-dispersion guide and having multiple gas-discharge ports;
a first exhaust port for exhausting, downstream of said gas-dispersion plate, the gas supplied onto the substrate surface; and
a second exhaust port for exhausting, upstream of said gas-dispersion plate, a gas inside said gas-dispersion guide through a gap between said gas-dispersion guide and said gas-dispersion plate.
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Accused Products
Abstract
A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.
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Citations
61 Claims
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1. A thin-film formation apparatus comprising:
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a reaction chamber to be evacuated;
a placing portion for placing a substrate thereon inside said reaction chamber;
a gas-dispersion guide disposed above said placing portion for supplying a gas onto a surface of said substrate;
a gas-supply port for introducing a gas into said gas-dispersion guide;
a gas-dispersion plate disposed on a substrate side of said gas-dispersion guide and having multiple gas-discharge ports;
a first exhaust port for exhausting, downstream of said gas-dispersion plate, the gas supplied onto the substrate surface; and
a second exhaust port for exhausting, upstream of said gas-dispersion plate, a gas inside said gas-dispersion guide through a gap between said gas-dispersion guide and said gas-dispersion plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 44, 45, 46, 47, 48, 49)
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24. A method for forming a thin film comprising the steps of:
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placing a substrate on a placing portion inside a reaction chamber evacuated;
introducing a gas from a gas-supply port to a gas-dispersion guide installed above said placing portion;
supplying the gas onto a substrate surface via a gas-dispersion plate disposed on a substrate side of the gas-dispersion guide and having multiple gas-discharge pores;
exhausting the gas supplied from said gas-dispersion plate onto the substrate surface from a first exhaust port downstream of said gas-dispersion plate; and
when switching to a subsequent gas to be introduced from said gas-supply port to said gas-dispersion guide, exhausting the gas remaining inside said gas-dispersion guide via a space between said gas-dispersion guide and said gas-dispersion plate from a second exhaust port upstream of said gas-dispersion plate. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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50. A thin-film formation apparatus comprising:
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a reaction chamber to be evacuated;
a placing portion on which a substrate is placed inside said reaction chamber;
a gas-dispersion guide installed above said placing portion for supplying a gas onto a surface of said substrate;
a gas-supply port for introducing a gas into said gas-dispersion guide, a gas-dispersion plate being disposed on a substrate side of said gas-dispersion guide and having multiple gas discharge pores;
an exhaust port for exhausting a gas supplied from said gas-dispersion plate to the substrate surface radially from a perimeter of said placing stand; and
a purge-gas ring disposed concentrically and at a given distance apart from a side portion of said placing stand, wherein a purge-gas slit is constituted by the side portion of said placing stand and said purge-gas ring, and a gas flow path is constituted by communicatively connecting said exhaust port with a lower space below said placing stand via said slit. - View Dependent Claims (51, 52, 53, 54, 55)
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56. A method for forming a thin film comprising the steps of:
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placing a substrate on a placing portion inside a reaction chamber evacuated;
introducing a gas from a gas-supply port to a gas-dispersion guide installed above said placing portion;
supplying the gas onto a substrate surface via a gas-dispersion plate disposed on a substrate side of the gas-dispersion guide and having multiple gas-discharge pores;
exhausting the gas supplied from said gas-dispersion plate onto the substrate surface from an exhaust port provided annularly around said placing stand;
suppressing diffusion of the gas to a lower space below said placing stand by introducing a purge gas from the lower space below said placing stand through a purge-gas slit and exhausting the purge gas from said exhaust port, said purge-gas slit being formed by a purge-gas ring disposed concentrically with said placing stand and at a given distance apart from a side portion of said placing stand. - View Dependent Claims (57, 58, 59, 60, 61)
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Specification