Method for manufacturing an electro-optical device
First Claim
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1. A method of manufacturing a light emitting device comprising:
- forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
forming an insulating film covering the second electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, and wherein the EL layer does not extend beyond the side edge of the bank.
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Abstract
An object of the present invention is to provide an EL display device having high operation performance and reliability.
A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.
128 Citations
20 Claims
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1. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
forming an insulating film covering the second electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, and wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (2, 3)
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4. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method; and
forming a second electrode covering the bank and the EL layer, wherein the EL layer is disposed adjacent to a side edge of the bank, wherein the EL layer does not extend beyond the side edge of the bank, and wherein the EL layer and the second electrode are formed continuously without exposure to the air. - View Dependent Claims (5)
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6. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
forming an insulating film covering the second electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, wherein the EL layer does not extend beyond the side edge of the bank, and wherein the EL layer, the second electrode, and the insulating film are formed continuously without exposure to the air. - View Dependent Claims (7, 8)
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9. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method; and
forming a second electrode covering the bank and the EL layer;
wherein a side surface of the bank is in contact with a side edge of the EL layer. - View Dependent Claims (10)
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11. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
forming an insulating film covering the second electrode, wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, and wherein the EL layer does not extend beyond the side edge of the bank. - View Dependent Claims (12, 13)
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14. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method; and
forming a second electrode covering the bank and the EL layer;
wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, wherein the EL layer does not extend beyond the side edge of the bank, and wherein the EL layer and the second electrode are formed continuously without exposure to the air. - View Dependent Claims (15)
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16. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
forming an insulating film covering the second electrode, wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode, wherein the EL layer is disposed adjacent to a side edge of the bank, wherein the EL layer does not extend beyond the side edge of the bank, and wherein the EL layer, the second electrode, and the insulating film are formed continuously without exposure to the air. - View Dependent Claims (17, 18)
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19. A method of manufacturing a light emitting device comprising:
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forming a thin film transistor over the substrate;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode electrically connected to the thin film transistor, over the interlayer insulating film;
forming a bank covering an edge of the first electrode, over the interlayer insulating film;
forming an EL layer by ink jet method;
forming a second electrode covering the bank and the EL layer; and
wherein the EL layer comprises at least one selected from the group consisting of a light emitting layer, a hole injecting layer, a hole transporting layer, an electron injecting layer, and an electron transporting layer, over the first electrode, wherein a side surface of the bank is in contact with a side edge of the EL layer. - View Dependent Claims (20)
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Specification