Modification of an image of a pattern during an imaging process

• US 20050210438A1
• Filed: 07/08/2004
• Published: 09/22/2005
• Est. Priority Date: 07/11/2003
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Jeunink, Andre Bernardus, Verstappen, Leonardus Henricus Marie, Finders, Jozef Maria, Tel, Wim Tjibbo, Van Der Hoff, Alexander Hendrikus Martinus
• Application Number:
  US10/886,055
• Publication Number:
  US 20050210438A1
• Time in Patent Office: Days
• US Class Current: 430/30
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/706 Aberration measurement

Abstract

A method is provided for modifying an image of a pattern during a lithographic imaging process, where the pattern is arranged on a mask for imaging by a projection system on a surface, and the image is an image formed from the pattern by the projection system. In this method the imaging quality of the projection system is described by selected imaging quality parameters, and the image is adjustable by image adjustment parameters of the projection system. The method comprises the steps of determining an ideal image of the pattern, determining a simulated distorted image of the pattern based on the selected imaging quality parameters; determining a deviation between the simulated distorted image and the ideal image, and adapting the image adjustment parameters during the imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of the selected imaging quality parameters.

Claims

1. A method for modifying an image of a pattern during an imaging process, the pattern being arranged on a mask for imaging by a projection system on a surface, the image being an image formed from the pattern by a portion of the projection system, an imaging quality of said portion of the projection system being described by selected imaging quality parameters, and the projection system being adapted to adjust the image by image adjustment parameters, comprising:

(a) determining an ideal image of the pattern;

(b) determining a simulated distorted image of the pattern based on said selected imaging quality parameters;

(c) determining a deviation between the simulated distorted image and the ideal image; and

(d) adapting said image adjustment parameters during said imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of said selected imaging quality parameters.

2. A method according to claim 1, wherein the portion of the projection system comprises one or more optical elements of the projection system.

3. A method according to claim 1, wherein said imaging quality parameters comprise low-order lens aberrations which relate to first distortion effects of the image which are independent of pupil plane filling in the projection system during the imaging process, and/or said imaging quality parameters comprise high-order lens aberrations which relate to second distortion effects of the image which depend on pupil plane filling in the projection system during the imaging process.

4. A method according to claim 1, wherein said adaptation of said image adjustment parameters comprises determination of image correction data for distortion coefficients by calculating settings for respective adjusting elements to obtain an image with minimal distortion, and using said image correction data as said image adjustment parameters for adjusting said adjusting elements.

5. A method according to claim 1, wherein said adaptation of said image adjustment parameters comprises determination of image correction data for distortion coefficients by:

(i) estimating, for each aberration type as defined by a respective Zernike coefficient, the sensitivity of an image feature to distortion with respect to the respective Zernike coefficient;

(ii) determining a first combination of the sensitivities for the aberration types in a first direction in the image; and

(iii) determining a second combination of the sensitivities for the aberration types in a second direction in the image, the second direction being substantially perpendicular to the first direction; and

(iv) using said image correction data as said image adjustment parameters for adjusting said projection system.

6. A method according to claim 1, wherein said image correction data is determined during said imaging process in a step-and-repeat mode.

7. A method according to claim 1, wherein said image correction data is determined on the basis of a slit coordinate during said imaging process in a step-and-scan mode.

8. A method according to claim 1, wherein said adaptation of said image adjustment parameters is optimised on the basis of data indicative of pupil plane filling of the projection system.

9. A method according to claim 1, wherein said adaptation of said image adjustment parameters is optimized on the basis of data indicative of the user-defined lithographic specification.

10. A method according to claim 1, wherein said adaptation of said image adjustment parameters is optimized by providing for the aberrations to which the particular application is sensitive to be compensated for according to an optimum requirement.

11. A method according to claim 1, wherein said adaptation of said image adjustment parameters includes measuring the aberrations of said portion of the projection system and calculating settings for respective optical elements within said projection system based on image correction data derived from the measured aberration values.

12. A method according to claim 1, wherein a further processing is provided in which the effect of a shift in associated overlay metrology and/or wafer alignment marks as a result of the imaging adjustment is compensated for on the basis of an optimisation procedure.

13. Apparatus for modifying an image of a pattern during an imaging process, comprising:

an mask table constructed and arranged to support a mask;

a projection system; and

a control system adapted to control and adjust machine parameters during execution of an imaging process and comprising a processor, a memory for storing instructions and data, and input/output circuitry for handling signals transmitted to and received from actuators and sensors in said projection system, said processor being connected to said memory for processing said instructions and data and to said input/output device for controlling said signals,

wherein the pattern is arranged on said mask for imaging by the projection system on a surface, the image being an image formed from the pattern by a portion of the projection system, an imaging quality of said portion of the projection system being described by selected imaging quality parameters, and said projection system being adapted to adjust the image by image adjustment parameters,

and wherein the control system is further adapted to perform a method comprising;

(a) determining an ideal image of the pattern;

(b) determining a simulated distorted image of the pattern based on said selected imaging quality parameters;

(c) determining a deviation between the simulated distorted image and the ideal image; and

(d) adapting said image adjustment parameters during said imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of said selected imaging quality parameters.

14. Apparatus according to claim 13, wherein said control system is adapted to optimize said adaptation of said image adjustment parameters on the basis of data indicative of pupil plane filling of the projection system.

15. Apparatus according to claim 13, wherein said control system is arranged to optimize said adaptation of said image adjustment parameters on the basis of data indicative of the user-defined lithographic specification.

16. Apparatus according to claim 13, wherein said control system is arranged to optimize said adaptation of said image adjustment parameters by providing for the aberrations to which the particular application is most sensitive to be compensated for according to an optimum requirement.

17. A method according to claim 13, wherein said control system is arranged to optimize said adaptation of said image adjustment parameters by measuring the aberrations of said portion of the projection system and calculating settings for respective optical elements within said projection system based on image correction data derived from the measured aberration values.

18. Apparatus according to claim 13, wherein said control system is arranged to carry out further processing in which the effect of a shift in associated overlay metrology and/or wafer alignment marks as a result of the imaging adjustment is compensated for on the basis of an optimization procedure.

19. A machine readable memory comprising machine executable instructions for use in an apparatus comprising a mask, a projection system, and a control system adapted to control and adjust machine parameters during execution of an imaging process and comprising a processor, a memory for storing instructions and data, and an input/output device for handling signals transmitted to and received from actuators and sensors in said projection system, said processor being connected to said memory for processing said instructions and data and to said input/output device for controlling said signals,

wherein the pattern is arranged on said mask for imaging by the projection system onto a surface, the image being an image formed from the pattern by a portion of the projection system, an imaging quality of said portion of the projection system being described by selected imaging quality parameters, and said projection system being adapted to adjust the image by image adjustment parameters,

the machine executable instructions comprising instructions for performing a method comprising:

(a) determining an ideal image of the pattern;

(b) determining a simulated distorted image of the pattern based on said selected imaging quality parameters;

(c) determining a deviation between the simulated distorted image and the ideal image; and

(d) adapting said image adjustment parameters during said imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of said selected imaging quality parameters.

20. Lithographic projection apparatus comprising:

an illumination system for conditioning a beam of radiation;

a support structure for supporting a patterning device, the patterning device serving to pattern the beam according to a pattern;

a substrate table for holding a substrate; and

a projection system for projecting the patterned beam onto a target portion of the substrate, the pattern being arranged on said patterning device for imaging by a projection system on a surface, the image being an image formed from the pattern by at least a portion of the projection system, an imaging quality of said portion of the projection system being described by selected imaging quality parameters, and said projection system being adapted to adjust the image by image adjustment parameters; and

a control system adapted to perform a method comprising;

(a) determining an ideal image of the pattern;

(b) determining a simulated distorted image of the pattern based on said selected imaging quality parameters;

(c) determining a deviation between the simulated distorted image and the ideal image; and

(d) adapting said image adjustment parameters during said imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of said selected imaging quality parameters.