Reactive sputter deposition plasma process using an ion shower grid

• US 20050211546A1
• Filed: 06/22/2004
• Published: 09/29/2005
• Est. Priority Date: 03/26/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Al-bayati, Amir, Tanaka, Tsutomu, Ramaswamy, Kartik, Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew
• Application Number:
  US10/873,602
• Publication Number:
  US 20050211546A1
• Time in Patent Office: Days
• US Class Current: 204/192.120
• CPC Class Codes: C23C 14/358 Inductive energy
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.

Claims

1. A reactive sputter deposition process, comprising:

providing a reactor chamber and an ion shower grid that divides said chamber into an upper ion generation region and a lower process region, said ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of said ion shower grid;

placing a workpiece in said process region, said workpiece having a workpiece surface generally facing said surface plane of said ion shower grid;

sputtering deposition precursor species from a sputter target comprising a semiconductor species in said ion generation region;

applying RF plasma source power to said ion generation region so as to generate a plasma from deposition precursor species sputtered from said target;

applying a grid potential to said ion shower grid to create a flux of ions through said grid; and

furnishing a gas species into said reactor chamber for combining with said semiconductor atoms to form molecules that deposit on said workpiece surface.

2. The process of claim 1 further comprising evacuating said process region at an evacuation rate sufficient to create a pressure drop across said ion shower grid of about an order of magnitude between said ion generation and process regions.

3. The process of claim 2 wherein said evacuation rate is sufficient to maintain an ion-neutral mean collision distance in said process region in excess of a multiple of a distance between said workpiece and said ion shower grid.

4. The process of claim 1 wherein:

said process is for depositing silicon dioxide on said workpiece surface;

said target comprises silicon; and

said gas species comprises oxygen.

5. The process of claim 4 wherein said process is for depositing a compound of silicon dioxide on said workpiece surface and said gas species further comprises at least one of hydrogen, nitrogen, boron, phosphorus, fluorine, carbon.

6. The process of claim 1 wherein:

said process is for depositing silicon nitride on said workpiece surface;

said target comprises silicon; and

said gas species comprises nitrogen.

7. The process of claim 6 wherein said process is for depositing a compound of silicon nitride on said workpiece surface and said gas species further comprises at least one of hydrogen, oxygen, boron, phosphorus, fluorine, carbon.

8. The process of claim 1 wherein the step of furnishing the gas species comprises injecting the gas species into said ion generation region, and wherein the step of sputtering comprises ionizing said gas species to perform ion bombardment of said target.

9. The process of claim 8 wherein the step of ionizing comprises applying a voltage between said semiconductor target and interior surfaces of said chamber.

10. The process of claim 9 further comprising maintaining a magnetic field near said target to promote ion bombardment of the target.

11. The process of claim 1 wherein the step of furnishing the gas species comprises injecting the gas species into the lower process region, and wherein the step of sputtering comprises ionizing an inert gas in said ion generation region.

12. The process of claim 11 wherein the step of ionizing comprises applying a voltage between said semiconductor target and interior surfaces of said chamber.

13. The process of claim 12 further comprising maintaining a magnetic field near said target to promote ion bombardment of the target.

14. The process of claim 1 wherein the step of sputtering comprises injecting a plasma from an external chamber into said sputtering region.

15. The process of claim 14 further comprising applying an attractive potential to said target.

16. The process of claim 1 wherein the steps of (a) applying plasma source power and (b) applying a grid potential are comprised within a single step of applying a potential between said ion shower grid and said ion generation region.

17. The process of claim 16 wherein the step of applying a potential between said grid and said ion generation region comprises applying a potential between said grid and a wall of said ion generation region.

18. The process of claim 17 wherein said potential is at least one of:

(a) a pulsed D.C. potential, (b) an RF potential, (c) a D.C. potential, (d) a pulsed RF potential.

19. The process of claim 1 further comprising controlling the temperature of said ion shower grid.

20. The process of claim 19 wherein the step of controlling the temperature of said ion shower grid comprises pumping a thermal transfer fluid through fluid flow passages thermally coupled to said ion shower grid and controlling the temperature of said thermal transfer fluid.

21. The process of claim 1 further comprising providing neutralization electrons in the vicinity of said workpiece.

22. The process of claim 21 wherein the step of providing neutralization electrons comprises establishing a magnetic field source under said workpiece having sufficient magnetic flux to trap electrons near said workpiece surface.

23. The process of claim 21 wherein the step of providing neutralization electrons comprises generating a flow of electrons from an electron gun toward said workpiece surface.

24. The process of claim 21 wherein the step of providing neutralization electrons comprises injecting an electron-donor gas into said process region and near said workpiece.

25. The process of claim 24 wherein said electron-donor gas comprises Zenon.

26. The process of claim 21 wherein the step of providing neutralization electrons comprises furnishing a plasma into said process region from an external plasma source.

27. The process of claim 1 wherein the step of applying plasma source power comprises capacitively coupling plasma source power into said ion generation region and the step of applying said grid potential comprises applying a grid potential between said plasma and said ion shower grid.

28. The process of claim 27 wherein the step of capacitively coupling plasma source power comprises applying RF power from an RF generator between a ceiling of said reactor and one of (a) said grid, (b) a side wall of said reactor.

29. The process of claim 28 wherein the step of applying a grid potential between said plasma and said ion shower grid comprises applying a potential from a grid potential source between a chamber surface of said ion generation region and said ion shower grid.

30. The process of claim 29 further comprising applying a bias potential to said workpiece, whereby said plasma, said grid and said workpiece have successively greater attractive potentials for ions.

31. The process of claim 27 wherein said plasma source power comprises RF power and said grid potential comprises at least one of:

(a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

32. The process of claim 31 wherein said grid potential comprises a mixture of at least two of (a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

33. The process of claim 1 wherein the step of applying plasma source power comprises inductively coupling plasma source power into said ion generation region and the step of applying said grid potential comprises applying a grid potential between said plasma and said ion shower grid.

34. The process of claim 33 wherein the step of applying a grid potential between said plasma and said ion shower grid comprises applying a potential from a grid potential source between a chamber surface of said ion generation region and said ion shower grid.

35. The process of claim 33 further comprising applying a bias potential to said workpiece, whereby said plasma, said grid and said workpiece have successively greater attractive potentials for ions.

36. The process of claim 33 wherein said plasma source power comprises RF power and said grid potential comprises at least one of:

(a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

37. The process of claim 36 wherein said grid potential comprises a mixture of at least two of (a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

38. The process of claim 1 wherein the step of applying plasma source power comprises coupling microwave power into said ion generation region and the step of applying said grid potential comprises applying a grid potential between said plasma and said ion shower grid.

39. The process of claim 38 wherein the step of applying a grid potential between said plasma and said ion shower grid comprises applying a potential from a grid potential source between a chamber surface of said ion generation region and said ion shower grid.

40. The process of claim 38 further comprising applying a bias potential to said workpiece, whereby said plasma, said grid and said workpiece have successively greater attractive potentials for ions.

41. The process of claim 38 wherein said plasma source power comprises RF power and said grid potential comprises at least one of:

(a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

42. The process of claim 41 wherein said grid potential comprises a mixture of at least two of (a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

43. The process of claim 1 wherein the step of applying plasma source power comprises generating a torroidal plasma current in said ion generation region through an external reentrant conduit coupled across said ion generation region, and the step of applying said grid potential comprises applying a grid potential between said plasma and said ion shower grid.

44. The process of claim 43 wherein the step of applying a grid potential between said plasma and said ion shower grid comprises applying a potential from a grid potential source between a chamber surface of said ion generation region and said ion shower grid.

45. The process of claim 43 further comprising applying a bias potential to said workpiece, whereby said plasma, said grid and said workpiece have progressively greater attractive potentials for ions.

46. The process of claim 43 wherein said plasma source power comprises RF power and said grid potential comprises at least one of:

(a) a pulsed D.C. voltage, (b) an RF voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

47. The process of claim 46 wherein said grid potential comprises a mixture of at least two of (a) a pulsed D.C. voltage, (b) an RF-voltage, (c) a D.C. voltage, (d) a pulsed RF voltage.

48. The process of claim 1 wherein said deposition precursor species comprise silicon and oxygen and said process deposits silicon dioxide.

49. The process of claim 48 wherein said deposition precursor further comprises at least one of the following additive species:

hydrogen, fluorine, phosphorus, boron, carbon.

50. The process of claim 1 wherein said deposition precursor species comprise silicon and nitrogen and said process deposits silicon nitride.

51. The process of claim 50 wherein said deposition precursor further comprises at least one of the following additive species:

hydrogen, fluorine, phosphorus, boron, carbon.

52. The process of claim 1 further comprising:

applying a bias voltage to said workpiece, said bias voltage comprising an RF bias voltage;

adjusting ion energy at said workpiece surface by adjusting the frequency of said RF bias voltage.

53. The process of claim 1 further the following steps carried out prior to the step of placing a workpiece in said process region:

depositing a layer of a process-compatible material on reactor chamber interior surfaces.

54. The process of claim 53 wherein the step of depositing a layer of a process-compatible material comprises:

introducing a process gas comprising a precursor of said process-compatible material into said ion generation region;

applying plasma source power into said ion generation region.

55. The process of claim 54 further comprising applying an ion extraction potential to said grid.

56. The process of claim 53 wherein the step of depositing a layer of a process-compatible material comprises furnishing into at least one of said ion generation and process regions ions or radicals of said process-compatible material from a plasma source external of said chamber.

57. The process of claim 1 further comprising the following steps carried out after the step of depositing a layer of a process-compatible material:

removing said workpiece from said chamber;

cleaning the reactor chamber interior surfaces.

58. The process of claim 57 wherein the step of cleaning the reactor interior chamber surfaces comprises:

introducing a process gas comprising an etchant species into said ion generation region;

applying plasma source power into said ion generation region and applying an ion extraction potential to said grid.

59. The process of claim 58 wherein the step of cleaning the reactor interior surfaces comprises:

furnishing into at least one of said ion generation and process regions ions or radicals of an etchant species.

60. The process of claim 1 further comprising maintaining said workpiece and said grid at generally the same electrical potential.

61. The process of claim 1 further comprising:

traversing said workpiece and said grid relative to one another so as to scan an ion beam from said grid across said workpiece.

62. The process of claim 61 wherein said workpiece has a diameter exceeding that of said grid.

63. The process of claim 1 further comprising tilting said workpiece relative to said grid.

64. The process of claim 1 further comprising thermally coupling said workpiece to a workpiece support pedestal and thermally cooling or heating said workpiece support pedestal.

65. The process of claim 64 further comprising electrostatically chucking said workpiece on said workpiece support pedestal.

66. The process of claim 31 further comprising maintaining said workpiece and said grid at generally the same electrical potential.

67. The process of claim 36 further comprising maintaining said workpiece and said grid at generally the same electrical potential.

68. The process of claim 41 further comprising maintaining said workpiece and said grid at generally the same electrical potential.

69. The process of claim 46 further comprising maintaining said workpiece and said grid at generally the same electrical potential.

70. The process of claim 27 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the voltage of said RF voltage.

71. The process of claim 33 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the voltage of said RF voltage.

72. The process of claim 38 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the voltage of said RF voltage.

73. The process of claim 43 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the voltage of said RF voltage.

74. The process of claim 27 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the frequency of said RF voltage.

75. The process of claim 33 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the frequency of said RF voltage.

76. The process of claim 38 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the frequency of said RF voltage.

77. The process of claim 43 further comprising applying a bias potential to said workpiece, wherein said bias potential includes an RF voltage, said process further comprising controlling ion energy near the workpiece surface by controlling the frequency of said RF voltage.