Device for reactive sputtering

• US 20050211550A1
• Filed: 08/12/2004
• Published: 09/29/2005
• Est. Priority Date: 03/26/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials GmbH & Co., KG (Applied Materials Incorporated)
• Original Assignee: Applied Materials GmbH & Co., KG (Applied Materials Incorporated)
• Inventors: Fritz, Thomas, Kemmerer, Gunter
• Application Number:
  US10/918,749
• Publication Number:
  US 20050211550A1
• Time in Patent Office: Days
• US Class Current: 204/192.130
• CPC Class Codes: C23C 14/0042 Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements

Abstract

A device for reactive sputtering, wherein a cathode is applied a discharge voltage for a plasma, and a working gas and a reactive gas are introduced into a sputter chamber. The total gas flow in the sputter chamber is controlled with the aid of a valve, while the ratio of the partial pressures of both gases is kept constant.

Claims

1-8. -8. (canceled)

9. A device for reactive sputtering, comprising:

at least one cathode to which is applied a discharge voltage for a plasma;

at least one working gas and at least one reactive gas in a sputter chamber;

a controllable valve with which total gas flow into the sputter chamber can be controlled; and

a regulation circuit, with which the ratio of partial pressures of the at least one working gas and at least one reactive gas is kept constant.

10. A device as claimed in claim 9, wherein at a spacing from the cathode a substrate to be worked can be moved past the cathode.

11. A device as claimed in claim 9, wherein evacuation ports for the gas in the sputter chamber are provided beneath the substrate to be worked.

12. A device as claimed in claim 9, further comprising several gas containers, each of which is provided with a controllable valve, the gases controlled by the valves being supplied to a common gas line.

13. A device as claimed in claim 9, further comprising pressure sensors that measure the pressure of the gases let through by the valves.

14. A device as claimed in claim 9, further comprising a shield between a substrate and said at least one cathode.

15. A device as claimed in claim 9, wherein the working gas is argon.

16. A method for the regulation of the discharge voltage during reactive sputtering in an inline installation, comprising moving several area substrates sequentially through a sputter chamber so that between two area substrates a gap is formed, and regulating the discharge voltage by varying a total gas stream.