Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver
First Claim
1. A semiconductor light emitting device comprising:
- a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area; and
a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and made of silver containing alloy or silver.
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Accused Products
Abstract
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.
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Citations
17 Claims
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1. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area; and
a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and made of silver containing alloy or silver. - View Dependent Claims (2, 3, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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4. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer, electrically connected to the second layer, and transmitting light irradiated from the luminous region;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area; and
a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and reflecting light irradiated from the luminous region.
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5. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area; and
a reflection film disposed on the insulating film, made of silver containing alloy or silver, and made in an electrically floating state, being connected neither to the p-side electrode nor to the n-side electrode. - View Dependent Claims (6, 7)
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8. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer, electrically connected to the second layer, and transmitting light irradiated from the luminous region;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area; and
a reflection film disposed on the insulating film, made in an electrically floating state, being connected neither to the p-side electrode nor to the n-side electrode, and reflecting light irradiated from the luminous region.
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Specification