HIGH-EFFICIENCY LIGHT-EMITTING ELEMENT
First Claim
Patent Images
1. A high-efficiency light-emitting element comprising:
- a substrate;
a first nitride semiconductor layer formed on the substrate;
a nitride light-emitting layer formed on the first nitride semiconductor layer; and
a second nitride semiconductor layer formed on the nitride light-emitting layer comprising a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer, wherein the hexagonal-pyramid cavity extends downward from the surface of the second nitride semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.
46 Citations
51 Claims
-
1. A high-efficiency light-emitting element comprising:
-
a substrate;
a first nitride semiconductor layer formed on the substrate;
a nitride light-emitting layer formed on the first nitride semiconductor layer; and
a second nitride semiconductor layer formed on the nitride light-emitting layer comprising a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer, wherein the hexagonal-pyramid cavity extends downward from the surface of the second nitride semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
-
-
39. A high-efficiency light-emitting element comprising:
-
a substrate;
a first nitride semiconductor layer formed on the substrate comprising;
a first surface a distance from the substrate; and
a second surface a distance from the substrate comprising a plurality of hexagonal-pyramid cavities, wherein the hexagonal-pyramid cavity extends downward from the second surface of the first nitride semiconductor layer;
a nitride light-emitting layer formed on the first surface; and
a second nitride semiconductor layer formed on the nitride light-emitting layer. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
-
Specification