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Semiconductor light emitting device

  • US 20050212002A1
  • Filed: 03/29/2005
  • Published: 09/29/2005
  • Est. Priority Date: 03/29/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order;

    electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;

    the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and

    said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

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