Semiconductor light emitting device

• US 20050212002A1
• Filed: 03/29/2005
• Published: 09/29/2005
• Est. Priority Date: 03/29/2004
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kasai, Hisashi, Sakamoto, Takahiko, Kususe, Takeshi, Sanga, Daisuke
• Granted Patent: US 7,615,798 B2
• Time in Patent Office: Days
• US Class Current: 257/96
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

Claims

1. A semiconductor light emitting device comprising:

a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order;

electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;

the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and

said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

2. The semiconductor light emitting device according to claim 1, wherein the electrode connected to said first conductive type semiconductor layer comprises a conductive oxide film and a metal film disposed on said conductive oxide film, and

said conductive oxide film included in said electrode connected to said first conductive type semiconductor layer comprises an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

3. The semiconductor light emitting device according to claim 2, wherein the upper conductive oxide film and the conductive oxide film of said first conductive type semiconductor layer have substantially the same composition and substantially the same thickness.

4. The semiconductor light emitting device according to claim 1, wherein the lower conductive oxide film has a thickness described by

A·

λ

/4n₁±

X 

 

(1)

(wherein A is an odd number, λ

is a wavelength of light emitted from the light emitting layer (Å

), n₁ is refractive index of the lower conductive oxide film, X is film thickness (Å

) which is 0 to 20% of an optical thin film (λ

/4n)).

5. The semiconductor light emitting device according to claim 4, wherein the upper conductive oxide film has a thickness described by

B·

λ

/4n₂+α

/2 

 

(2)

(wherein B is an even number, λ

is the wavelength of light emitted from the light emitting layer (Å

), n₂ is the refractive index of the upper conductive oxide film, and α

is distance of phase shift (Å

)).

6. The semiconductor light emitting device according to claim 1, wherein the lower conductive oxide film has a lower density adjacent to an interface with the second conductive type semiconductor layer than that adjacent to its surface.

7. The semiconductor light emitting device according to claim 1, wherein the upper conductive oxide film has a higher density than a portion of the lower conductive oxide film adjacent to an interface with the second conductive type semiconductor layer.

8. The semiconductor light emitting device according to claim 1, wherein the upper conductive oxide film and the lower conductive oxide film are made of an indium tin oxide.

9. The semiconductor light emitting device according to claim 3, wherein the upper conductive oxide film and the conductive oxide film of said first conductive semiconductor layer are made of an indium tin oxide.

10. The semiconductor light emitting device according to claim 4, wherein the lower conductive oxide film is made of an indium tin oxide.

11. The semiconductor light emitting device according to claim 5, wherein the upper conductive oxide film and the lower conductive oxide film are made of an indium tin oxide.

12. The semiconductor light emitting device according to claim 1, wherein the metal film is at least one of a single-layer film and a multi-layer film made of W, Rh, Ag, Pt, Pd, and Al.

13. The semiconductor light emitting device according to claim 3, wherein the metal film is at least one of a single-layer film and a multi-layer film made of W, Rh, Ag, Pt, Pd, and Al.

14. The semiconductor light emitting device according to claim 1, wherein the first conductive type semiconductor layer is an n-type semiconductor layer and the second conductive type semiconductor layer is a p-type semiconductor layer, and

wherein the semiconductor layer is a nitride semiconductor layer.

15. The semiconductor light emitting device according to claim 1, wherein the first conductive type semiconductor layer is disposed on a substrate, and protrusions are disposed on at least a portion of an interface between said substrate and the first conductive type semiconductor layer.

16. The semiconductor light emitting device according to claim 15, wherein said protrusions are disposed on at least a surface of the substrate that is below the metal film disposed on the upper conductive oxide film.

17. The semiconductor light emitting device according to claim 1, wherein the electrode connected to the first conductive type semiconductor layer and the electrode connected to the second conductive type semiconductor layer are disposed on a common surface side,

said first conductive type semiconductor layer comprises a first region provided with the stacked layer structure of semiconductor having the upper conductive oxide film and the lower conductive oxide film and a second region that is different than said first region, and

a plurality of protrusions are provided in said second region.

18. The semiconductor light emitting device according to claim 17, wherein said protrusions provided in the second region are made of substantially the same material as the semiconductor layer in the first region, and upper portions of said protrusions are made of substantially the same material as the lower conductive oxide film.

19. A semiconductor light emitting device comprising:

a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order;

electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;

the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and

said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg), and

wherein the electrode connected to said first conductive type semiconductor layer comprises a conductive oxide film and a metal film disposed on said conductive oxide film, and

said conductive oxide film included in said electrode connected to said first conductive type semiconductor layer comprises an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg), and

wherein the upper conductive oxide film and the conductive oxide film of said first conductive type semiconductor layer have substantially the same composition and substantially the same thickness, and

wherein the lower conductive oxide film has a thickness described by

A·

λ

/4n₁±

X 

 

(1)

(wherein A is an odd number, λ

is a wavelength of light emitted from the light emitting layer (Å

), n₁ is refractive index of the lower conductive oxide film, X is film thickness (Å

) which is 0 to 20% of an optical thin film (λ

/4n)), and

wherein the upper conductive oxide film has a thickness described by

B·

λ

/4n₂+α

/2 

 

(2)

(wherein B is an even number, λ

is the wavelength of light emitted from the light emitting layer (Å

), n₂ is the refractive index of the upper conductive oxide film, and α

is distance of phase shift (Å

)).

20. A semiconductor light emitting device comprising:

a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order;

electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;

the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and

said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg) and

wherein the lower conductive oxide film has a thickness described by

A·

λ

/4n₁±

X 

 

(1)

(wherein A is an odd number, λ

is a wavelength of light emitted from the light emitting layer (Å

), n₁ is refractive index of the lower conductive oxide film, X is film thickness (Å

) which is 0 to 20% of an optical thin film (λ

/4n)), and

wherein the upper conductive oxide film has a thickness described by

B·

λ

/4n₂+α

/2 

 

(2)

(wherein B is an even number, λ

is the wavelength of light emitted from the light emitting layer (Å

), n₂ is the refractive index of the upper conductive oxide film, and α

is distance of phase shift (Å

)), and

wherein the metal film is at least one of a single-layer film and a multi-layer film made of W, Rh, Ag, Pt, Pd, and Al.