Stack structure and method of manufacturing the same

• US 20050212111A1
• Filed: 03/14/2005
• Published: 09/29/2005
• Est. Priority Date: 03/23/2004
• Status: Abandoned Application

• Current Assignee: Casio Computer Company Limited
• Original Assignee: Casio Computer Company Limited
• Inventors: Takeyama, Keishi, Nomura, Masatoshi, Nakamura, Osamu, Terazaki, Tsutomu
• Application Number:
  US11/080,272
• Publication Number:
  US 20050212111A1
• Time in Patent Office: Days
• US Class Current: 257/686
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81C 1/00119 Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: Y02E 60/50 Fuel cells

Abstract

A stack structure is formed by stacking and bonding a plurality of substrates. The stack structure includes. Bonding films each of which is interposed in a bonding region between, adjacent glass substrates, and bonded to oxygen atoms in the glass of the substrate by anodic bonding.

Claims

1. A stack structure formed by stacking and bonding a plurality of substrates, comprising:

a bonding film which is interposed in a bonding region between, of the plurality of substrates, a first substrate and a second substrate containing glass, and bonded to oxygen atoms in the glass of the second substrate by anodic bonding.

2. A stack structure according to claim 1, wherein the bonding film contains a material having one of a metal and an alloy whose melting point is at least 2,000°

C. when the bonding film is not bonded to oxygen by anodic bonding.

3. A stack structure according to claim 1, wherein the bonding film has a material containing at least one of Ta, W, Mo, TaSi₂, WSi₂, and MoSi₂ when the bonding film is not bonded to oxygen by anodic bonding.

4. A stack structure according to claim 1, further comprising a buffer film which is interposed between the oxidized bonding film and the first substrate and has a resistivity lower than the plurality of substrates.

5. A stack structure according to claim 1, wherein at least one of the first substrate and second substrate has a space in which a chemical reaction occurs.

6. A stack structure according to claim 1, wherein the glass of the second substrate contains alkali alone.

7. A stack structure according to claim 1, wherein the glass of the second substrate is doped with at least one of sodium oxide, lithium oxide, potassium oxide, and lithium carbonate.

8. A stack structure according to claim 1, further comprising a bonding film which is interposed between, of the plurality of substrates, the second substrate and a third substrate containing glass, and bonded to oxygen atoms in the glass of the third substrate by anodic bonding.

9. A stack structure according to claim 1, wherein the first substrate comprises a glass substrate.

10. A stack structure according to claim 1, further comprising a reformer which has, in the plurality of substrates, a space in which a reforming reaction occurs.

11. A stack structure formed by stacking and bonding a plurality of substrates including at least a glass substrate, comprising:

a buffer film which is interposed in a bonding region of the glass substrate of the plurality of substrates and receives an alkali component in the glass substrate, which has moved due to a voltage applied to the glass substrate.

12. A stack structure according to claim 11, wherein the buffer film has a material having a resistivity lower than the glass substrate.

13. A stack structure according to claim 11, wherein the buffer film has an amorphous oxide.

14. A stack structure according to claim 11, wherein at least one of a compound containing Ta, Si, and O as component elements, a compound containing La, Sr, Mn, and O as component elements, and lead glass is used as the buffer film.

15. A stack structure according to claim 11, wherein the buffer film is interposed on an entire bonding surface between the glass substrate and another substrate.

16. A stack structure according to claim 11, further comprising a reformer which has, in the plurality of substrates, a space in which a reforming reaction occurs.

17. A method of manufacturing stack structure including a plurality of substrates, comprising:

executing anodic bonding to bond a bonding film which is interposed between, of the plurality of substrates, a first substrate and a second substrate containing glass to oxygen atoms in the glass of the second substrate.

18. A stack structure manufacturing method according to claim 17, further comprising

executing anodic bonding to bond a bonding film which is interposed between, of the plurality of substrates, the second substrate and a third substrate containing glass to oxygen atoms in the glass of the second substrate.

19. A stack structure manufacturing method according to claim 18, wherein a direction of an electric field in anodic bonding between the first substrate and the second substrate is the same as a direction of an electric field in anodic bonding between the second substrate and the third substrate.

20. A stack structure manufacturing method according to claim 18, wherein anodic bonding between the first substrate and the second substrate and anodic bonding between the second substrate and the third substrate are executed separately.

21. A stack structure manufacturing method according to claim 18, wherein anodic bonding between the first substrate and the second substrate and anodic bonding between the second substrate and the third substrate are executed simultaneously.

22. A stack structure manufacturing method according to claim 17, wherein anodic bonding between the first substrate and the second substrate is executed by connecting a positive electrode of an anodic bonding apparatus to the bonding film and a negative electrode of the anodic bonding apparatus to the glass of the second substrate.

23. A stack structure manufacturing method according to claim 17, wherein the bonding film contains a material having one of a metal and an alloy whose melting point is not less than 2,000°

C. when the bonding film is not bonded to oxygen by anodic bonding.

24. A stack structure manufacturing method according to claim 17, wherein the bonding film has a material containing at least one of Ta, W, Mo, TaSi₂, WSi₂, and MoSi₂ when the bonding film is not bonded to oxygen by anodic bonding.

25. A method of manufacturing a stack structure including a plurality of substrates, comprising steps of:

bringing one surface of a glass substrate of the plurality of substrates into contact with another substrate; and

anodic-bonding the glass substrate to the other substrate in a state in which a buffer film capable of receiving an alkali component in the glass substrate is provided on the other surface of the glass substrate.

26. A stack structure manufacturing method according to claim 25, wherein anodic bonding is executed to make a potential on a side of said one surface of the glass substrate higher than that on a side of said other surface.

27. A stack structure manufacturing method according to claim 25, wherein the buffer film has a material having a resistivity lower than the glass substrate.

28. A stack structure manufacturing method according to claim 25, wherein the buffer film contains an amorphous oxide.

29. A stack structure manufacturing method according to claim 25, wherein at least one of a compound containing Ta, Si, and O as component elements, a compound containing La, Sr, Mn, and O as component elements, and lead glass is used as the buffer film.

30. A stack structure manufacturing method according to claim 25, wherein the buffer film is interposed on an entire bonding surface between the glass substrate and the other substrate.