High frequency reaction processing system

• US 20050212626A1
• Filed: 05/06/2003
• Published: 09/29/2005
• Est. Priority Date: 05/07/2002
• Status: Abandoned Application

• Current Assignee: Toshiyuki Takamatsu
• Original Assignee: Toshiyuki Takamatsu
• Inventors: Takamatsu, Toshiyuki
• Application Number:
  US10/513,427
• Publication Number:
  US 20050212626A1
• Time in Patent Office: Days
• US Class Current: 333/212
• CPC Class Codes: H05B 6/70 Feed lines
• CPC Class Codes: H05B 6/806 for laboratory use

Abstract

A high frequency reaction processing system comprising an outer container (40) made of a dielictric material and having two end faces, which can close the inner cavity, one or more high frequency wave coupling portion (42) disposed at arbitrary position on the outer surface of the outer container (40), one or more inner container (41) made of a dielectric material and having two end faces, which can closeg the inner cavity, disposed at a position for receiving a high frequency wave guided through the high frequency wave coupling portion (42) without touching the inner side face of the outer container (40), and a covering portion (43) made of a conductive material, for covering the outer surface of the outer container except for the area occupied with the high frequency wave coupling portion (42) and sustaining the potential at a level equal to the ground potential of a waveguide line.

Claims

1. A high frequency reaction processing system, comprising:

an outer container made of dielectric material, formed so that two end faces can close a cavity;

one or more high frequency wave coupling portion located at an optional position on the outer face of the outer container;

one or more inner containers made of a dielectric material and formed so that two end faces can close a cavity and located without contacting the inner face of the outer container at a position to receive a high frequency wave traveling through a high frequency wave coupling portion; and

a covering portion made of conductive material and covering the outer face of the outer container except the area covered with the high frequency wave coupling portion and keeping a potential equal to the ground potential of a high frequency waveguide,

and generating plasma in the cavity of the inner container.

3. A high frequency reaction processing system according to claim 1, wherein the shape of the outer container or the inner container is ellipse column or oval

and the distance between the outer face of the outer container and the inner face of the inner container is constant.

4. A high frequency reaction processing system according to claim 1, wherein the distance between the outer face of the outer container and the inner face of the inner container is integer times ¼

of the wavelength of a guided high frequency wave.

5. A high frequency reaction processing system according to claim 1, wherein the length of the outer side face outline of the outer container is integer times ¼

of the wavelength of a guided high frequency wave.

6. A high frequency reaction processing system according to claim 1, wherein the length of the axis connecting the both end faces of the outer container is integer times ¼

of wavelength of a guided high frequency wave.

7. A high frequency reaction processing system according to claim 1, wherein cooling medium with a low dielectric constant continuously flows in a region between the outer container and the inner container.

8. A high frequency reaction processing system according to claim 1, wherein the inner side face of the outer container or the outer side face of the inner container is formed uneven-shaped.

9. A high frequency reaction processing system according to claim 1, wherein high frequency waves are guided through plural high frequency wave coupling portions and a wavelength of a specified high frequency wave is same as or integer times ¼

of the wavelength of the other guided high frequency waves.

10. A high frequency reaction processing system according to claim 1, wherein the outer container is composed of plural dielectric layers with different dielectric constants.

11. A high frequency reaction processing system according to claim 10, wherein a dielectric layer of the outer container is composed of a molded member or a multilayer member including mica.

12. A high frequency reaction processing system according to claim 1, wherein a magnetic field is traversed with an electric field of a high frequency wave and along an axis connecting the both end faces of the outer container or the inner container

13. A high frequency reaction processing system according to claim 1, wherein the inner containers comprise the first inner container located in the outer container without contacting the inner side face of the outer container and the second inner container located in the first inner container without contacting the inner side face of the first inner container, and the first inner container or the second inner container is made of dielectric material transmissive for ultraviolet rays.

14. A high frequency reaction processing system according to claim 1, wherein the inner containers comprise the first inner container located in the outer container without contacting the inner side face of the outer container and the second inner container located in the first inner container without contacting the inner side face of the first inner container, and ports for passage of process medium are located on end faces of the outer container on a region between the outer container and the first inner container.

15. A high frequency reaction processing system according to claim 1, wherein ports for passage of process medium are located on end faces of the inner container.

16. A high frequency reaction processing system according to claim 1, wherein porous ceramics material or catalyst material for decomposition or alteration process is located in the cavity of the inner container.

17. A high frequency reaction processing system according to claim 1, wherein a reaction process of liquid or solid is carried out in the cavity of the inner container by an electromagnetic wave guided through the high frequency wave coupling portion.

18. A high frequency reaction processing system according to claim 1, wherein a photochemical reaction process with vacuum ultraviolet rays generated in the high frequency wave ionized gas plasma or a process using exitation phenomenon by irradiation of a high frequency electromagnetic wave is carried out for the liquid or gas.

2. A high frequency reaction processing system, comprising:

an outer container made of dielectric material, formed so that two end faces can close a cavity;

one or more high frequency wave coupling portion located at an optional position on the outer face of the outer container;

one or more inner containers made of a dielectric material and formed so that two end faces can close a cavity and located without contacting the inner face of the outer container at a position to receive a high frequency wave traveling through a high frequency wave coupling portion; and

a covering portion made of conductive material and covering the outer face of the outer container except the area covered with the high frequency wave coupling portion and keeping a potential equal to the ground potential of a high frequency waveguide,

and carrying out a reaction process with an electromagnetic wave guided through the high frequency wave coupling portion in the cavity of the inner container.

19. A high frequency reaction processing system according to claim 2, wherein the shape of the outer container or the inner container is ellipse column or oval

and the distance between the outer face of the outer container and the inner face of the inner container is constant.

20. A high frequency reaction processing system according to claim 2, wherein the distance between the outer face of the outer container and the inner face of the inner container is integer times ¼

of the wavelength of a guided high frequency wave.

21. A high frequency reaction processing system according to claim 2, wherein the length of the outer side face outline of the outer container is integer times ¼

of the wavelength of a guided high frequency wave.

22. A high frequency reaction processing system according to claim 2, wherein the length of the axis connecting the both end faces of the outer container is integer times ¼

of wavelength of a guided high frequency wave.

23. A high frequency reaction processing system according to claim 2, wherein cooling medium with a low dielectric constant continuously flows in a region between the outer container and the inner container.

24. A high frequency reaction processing system according to claim 2, wherein the inner side face of the outer container or the outer side face of the inner container is formed uneven-shaped.

25. A high frequency reaction processing system according to claim 2, wherein high frequency waves are guided through plural high frequency wave coupling portions and a wavelength of a specified high frequency wave is same as or integer times ¼

of the wavelength of the other guided high frequency waves.

26. A high frequency reaction processing system according to claim 2, wherein the outer container is composed of plural dielectric layers with different dielectric constants.

27. A high frequency reaction processing system according to claim 26, wherein a dielectric layer of the outer container is composed of a molded member or a multilayer member including mica.

28. A high frequency reaction processing system according to claim 2, wherein a magnetic field is traversed with an electric field of a high frequency wave and along an axis connecting the both end faces of the outer container or the inner container

29. A high frequency reaction processing system according to claim 2, wherein the inner containers comprise the first inner container located in the outer container without contacting the inner side face of the outer container and the second inner container located in the first inner container without contacting the inner side face of the first inner container, and the first inner container or the second inner container is made of dielectric material transmissive for ultraviolet rays.

30. A high frequency reaction processing system according to claim 2, wherein the inner containers comprise the first inner container located in the outer container without contacting the inner side face of the outer container and the second inner container located in the first inner container without contacting the inner side face of the first inner container, and ports for passage of process medium are located on end faces of the outer container on a region between the outer container and the first inner container.

31. A high frequency reaction processing system according to claim 2, wherein ports for passage of process medium are located on end faces of the inner container.

32. A high frequency reaction processing system according to claim 2, wherein porous ceramics material or catalyst material for decomposition or alteration process is located in the cavity of the inner container.

33. A high frequency reaction processing system according to claim 2, wherein a reaction process of liquid or solid is carried out in the cavity of the inner container by an electromagnetic wave guided through the high frequency wave coupling portion.

34. A high frequency reaction processing system according to claim 2, wherein a photochemical reaction process with vacuum ultraviolet rays generated in the high frequency wave ionized gas plasma or a process using exitation phenomenon by irradiation of a high frequency electromagnetic wave is carried out for the liquid or gas.