Deposition of low dielectric constant films by N2O addition

• US 20050214457A1
• Filed: 03/29/2004
• Published: 09/29/2005
• Est. Priority Date: 03/29/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Branshaw, Kimberly A., M'Saad, Hichem, Schmitt, Francimar, Krishnaraj, Padmanabhan
• Application Number:
  US10/812,717
• Publication Number:
  US 20050214457A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N₂O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N₂O and oxygen as oxidizing gases, and a ratio of the flow rate of the N₂O to a total flow rate of the N₂O and the oxygen is between about 0.1 and about 0.5.

Claims

1. A method for depositing a low dielectric constant film, comprising:

delivering a gas mixture comprising;

a cyclic organosiloxane; and

two or more oxidizing gases comprising N₂O and O₂ to a substrate in a chamber, wherein a ratio of a flow rate of the N₂O to a total flow rate of the two or more oxidizing gases into the chamber is between about 0.1 and about 0.5; and

applying RF power to the gas mixture at conditions sufficient to deposit a low dielectric constant film on a surface of the substrate.

2. The method of claim 1, wherein the two or more oxidizing gases consist of N₂O and O₂.

3. The method of claim 1, wherein the cyclic organosiloxane is octamethylcyclotetrasiloxane (OMCTS).

4. The method of claim 1, wherein cyclic organosiloxane is selected from the group consisting of 1,3,5-trimethylcyclotrisiloxane, hexamethylcyclotrisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, and decamethylcyclopentasiloxane.

5. The method of claim 4, wherein the gas mixture further comprises an inert gas selected from the group consisting of helium, argon, and combinations thereof.

6. The method of claim 1, further comprising post-treating the low dielectric constant film with an electron beam.

7. A method for depositing a low dielectric constant film, comprising:

delivering a gas mixture comprising;

a cyclic organosiloxane; and

an oxidizing gas comprising N₂O to a substrate in a chamber, wherein the N₂O is delivered into the chamber at a flow rate between about 0.71 sccm/cm² and about 1.42 sccm/cm²; and

applying RF power to the gas mixture at conditions sufficient to deposit a low dielectric constant film on a surface of the substrate.

8. The method of claim 7, wherein the oxidizing gas consists of N₂O.

9. The method of claim 7, wherein the gas mixture further comprises a linear hydrocarbon.

10. The method of claim 9, wherein the linear hydrocarbon is ethylene.

11. The method of claim 7, wherein the cyclic organosiloxane is octamethylcyclotetrasiloxane (OMCTS).

12. The method of claim 7, wherein the cyclic organosiloxane is selected from the group consisting of 1,3,5-trimethylcyclotrisiloxane, hexamethylcyclotrisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, and decamethylcyclopentasiloxane.

13. The method of claim 7, wherein the gas mixture further comprises an inert gas selected from the group consisting of helium, argon, and combinations thereof.

14. The method of claim 7, further comprising post-treating the low dielectric constant film with an electron beam.

15. A method for depositing a low dielectric constant film, comprising:

delivering a gas mixture comprising;

a cyclic organosiloxane;

a linear hydrocarbon having at least one unsaturated carbon-carbon bond; and

two or more oxidizing gases comprising N₂O and O₂ to a substrate in a chamber; and

applying RF power to the gas mixture at conditions sufficient to deposit a low dielectric constant film on a surface of the substrate.

16. The method of claim 15, wherein the two or more oxidizing gases consist of N₂O and O₂.

17. The method of claim 15, wherein the cyclic organosiloxane is octamethylcyclotetrasiloxane (OMCTS).

18. The method of claim 15, wherein the cyclic organosiloxane is selected from the group consisting of 1,3,5-trimethylcyclotrisiloxane, hexamethylcyclotrisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), 1,3,5,7,9-pentamethylcyclopentasiloxane, and decamethylcyclopentasiloxane.

19. The method of claim 15, wherein the linear hydrocarbon is ethylene.

20. The method of claim 15, wherein the gas mixture further comprises an inert gas selected from the group consisting of helium, argon, and combinations thereof.