Low zirconium hafnium halide compositions

• US 20050214458A1
• Filed: 02/24/2005
• Published: 09/29/2005
• Est. Priority Date: 03/01/2004
• Status: Abandoned Application

• Current Assignee: Praxair Incorporated (Linde Plc)
• Original Assignee: Praxair Incorporated (Linde Plc)
• Inventors: Meiere, Scott Houston
• Application Number:
  US11/063,638
• Publication Number:
  US 20050214458A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence

Abstract

This invention relates to hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, a process for producing the hafnium halide compositions having a zirconium concentration of less than about 1000 parts per million, organometallic compound precursors, a process for producing the organometallic compound precursors, and a method for producing a film or coating from the organometallic compound precursors. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Claims

1. A process for producing a composition comprising a hafnium-containing compound represented by the formula Hf(X)₄ wherein X is the same or different and is a halide and wherein said composition has a zirconium concentration of less than about 1000 parts per million, which process comprises reacting a hafnium oxide compound, wherein said hafnium oxide compound has a zirconium concentration of less than about 1000 parts per million, with a haolgen or halogen-containing compound under reaction conditions sufficient to produce said composition.

2. The process of claim 1 wherein said composition has a zirconium concentration of less than about 500 parts per million and said hafnium oxide compound has a zirconium concentration of less than about 500 parts per million.

3. The process of claim 1 wherein said composition has a zirconium concentration of less than about 100 parts per million and said hafnium oxide compound has a zirconium concentration of less than about 100 parts per million.

4. The process of claim 1 wherein said halogen or halogen-containing compound comprises chlorine, bromine, iodine, fluorine or a chloride, bromide, iodide or fluoride.

5. The process of claim 1 wherein said hafnium-containing compound comprises HfCl₄, HfF₄, HfBr₄, or HfI₄.

6. The process of claim 1 wherein said hafnium-containing compound is HfCl₄.

7. A composition comprising a hafnium-containing compound represented by the formula Hf(X)₄ wherein X is the same or different and is a halide and wherein said composition has a zirconium concentration of less than about 1000 parts per million.

8. A composition comprising a hafnium-containing compound represented by the formula Hf(X)₄ wherein X is the same or different and is a halide and wherein said composition has a zirconium concentration of less than about 1000 parts per million, said composition produced by a process which comprises reacting a hafnium oxide compound, wherein said hafnium oxide compound has a zirconium concentration of less than about 1000 parts per million, with a haolgen or halogen-containing compound under reaction conditions sufficient to produce said composition.

9. A process for producing a composition comprising an organometallic precursor compound, wherein said composition has a zirconium concentration of less than about 1000 parts per million, which process comprises reacting a hydrocarbon or heteroatom-containing compound with a hafnium-containing compound represented by the formula Hf(X)₄ wherein X is the same or different and is a halide and wherein said hafnium-containing compound has a zirconium concentration of less than about 1000 parts per million, under reaction conditions sufficient to produce said composition.

10. The process of claim 9 wherein said hydrocarbon or heteroatom-containing compound comprises a lithiated amide, alkoxide, diketonate, cyclopentadienide or imide.

11. The process of claim 9 wherein said hafnium-containing compound comprises HfCl₄, HfF₄, HfBr₄, or HfI₄.

12. The process of claim 9 wherein said hafnium-containing compound is HfCl₄.

13. The process of claim 9 wherein said organometallic precursor compound comprises hafnium amide, hafnium (IV) tert-butoxide, hafnium (IV) acetylacetonate, bis(cyclopentadienyl)hafnium dichloride or t-butylimidobis(dimethylamino)hafnium.

14. A composition comprising an organometallic precursor compound, wherein said composition has a zirconium concentration of less than about 1000 parts per million, said composition produced by a process which comprises reacting a hydrocarbon or heteroatom-containing compound with a hafnium-containing compound represented by the formula Hf(X)₄ wherein X is the same or different and is a halide and wherein said hafnium-containing compound has a zirconium concentration of less than about 1000 parts per million, under reaction conditions sufficient to produce said composition.

15. A method for producing a film, coating or powder having a zirconium concentration of less than about 1000 parts per million, by decomposing an organometallic precursor compound of claim 14, thereby producing the film, coating or powder.

16. The method of claim 15 wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated.

17. The method of claim 15 wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate.

18. The method of claim 17 wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material.

19. The method of claim 17 wherein said substrate is a patterned wafer.

20. The method of claim 15 wherein said film, coating or powder is produced by a gas phase deposition.