Method and apparatus for reforming film and controlling slimming amount thereof

• US 20050214683A1
• Filed: 02/24/2005
• Published: 09/29/2005
• Est. Priority Date: 02/24/2004
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nishimura, Eiichi, Tanaka, Takashi, Iwashita, Mitsuaki, Honda, Minoru, You, Gen
• Application Number:
  US11/064,088
• Publication Number:
  US 20050214683A1
• Time in Patent Office: Days
• US Class Current: 430/296
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.

Claims

1. A film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, wherein the electron beams are irradiated in a state where the film layer is cooled.

2. The film reforming method of claim 1, wherein the film layer is cooled below 0°

C.

3. The film reforming method of claim 1, wherein the film layer is an ArF resist film layer on which a pattern having a specified opening dimension is formed and a change in the specified opening dimension is suppressed by irradiating the electron beams thereon.

4. The film reforming method of claim 1, wherein the film layer is a layer to be etched that is etched through a first mask layer having a specified pattern formed thereon.

5. The film reforming method of claim 4, wherein the film layer is used as a second mask layer for etching a lower layer formed thereunder.

6. The film reforming method of claim 4, wherein the first mask layer is an ArF resist film layer.

7. The film reforming method of claim 5, wherein the second mask layer is formed by laminating an organic material layer and an inorganic material layer.

8. The film reforming method of claim 7, wherein the second mask layer is formed by a spin coating method.

9. A slimming amount controlling method for controlling a slimming amount of a resist film layer by an irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled.

10. The slimming amount controlling method of claim 9, wherein the resist film layer is cooled below 0°

C.

11. The slimming amount controlling method of claim 9, wherein the resist film layer is an ArF resist film layer.

12. A film reforming apparatus, comprising:

a mounting unit for mounting thereon an object to be processed; and

an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on the object,

wherein the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.

13. The film reforming apparatus of claim 12, wherein the cooling unit cools the film layer below 0°

C.