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Replacement gate process for making a semiconductor device that includes a metal gate electrode

  • US 20050214987A1
  • Filed: 03/24/2004
  • Published: 09/29/2005
  • Est. Priority Date: 03/24/2004
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming a dielectric layer on a substrate;

    forming a polysilicon layer on the dielectric layer; and

    etching the polysilicon layer to generate a patterned polysilicon layer that has an upper surface and a lower surface, the upper surface having a first width that is less than or equal to about 45 angstroms and the lower surface having a second width that is less than or equal to about 40 angstroms;

    wherein the first width is at least about 5 angstroms greater than the second width.

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