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Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors

  • US 20050214990A1
  • Filed: 05/31/2005
  • Published: 09/29/2005
  • Est. Priority Date: 05/29/1992
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device comprising at least two p-channel thin film transistors, said method comprising the steps of:

  • forming a semiconductor island over a substrate;

    forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;

    forming a source region, a drain region and a channel region formed between the source and drain regions, wherein the two p-channel thin film transistors are connected in series.

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