Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
First Claim
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1. A method of manufacturing a semiconductor device comprising at least two p-channel thin film transistors, said method comprising the steps of:
- forming a semiconductor island over a substrate;
forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;
forming a source region, a drain region and a channel region formed between the source and drain regions, wherein the two p-channel thin film transistors are connected in series.
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Abstract
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
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Citations
1 Claim
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1. A method of manufacturing a semiconductor device comprising at least two p-channel thin film transistors,
said method comprising the steps of: -
forming a semiconductor island over a substrate;
forming a gate electrode adjacent to the semiconductor island with a gate insulating film therebetween;
forming a source region, a drain region and a channel region formed between the source and drain regions, wherein the two p-channel thin film transistors are connected in series.
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Specification