Apparatus and method for utilizing a meniscus in substrate processing

• US 20050217703A1
• Filed: 09/30/2004
• Published: 10/06/2005
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: O'Donnell, Robert J.
• Granted Patent: US 7,093,375 B2
• Time in Patent Office: Days
• US Class Current: 134/21
• CPC Class Codes: B05C 11/1039 Recovery of excess liquid or other fluent material; Controlling means therefor
• CPC Class Codes: B05C 5/02 the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/67075 for wet etching
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.

Claims

1. An apparatus for processing a substrate, comprising:

a proximity head configured to be proximate to a surface of the substrate when in operation;

an opening on a surface of the proximity head to a cavity defined in the proximity head, the cavity being configured to deliver an active agent to the surface of the substrate through the opening; and

a plurality of conduits on the surface of the proximity head configured to generate a fluid meniscus on the surface of the substrate surrounding the opening.

2. An apparatus for processing a substrate as recited in claim 1, wherein the fluid meniscus processes the surface of the substrate.

3. An apparatus for processing a substrate as recited in claim 1, wherein the plurality of conduits includes a plurality of inlets and a plurality of outlets.

4. An apparatus for processing a substrate as recited in claim 1, wherein the plurality of conduits includes an inlet to apply a fluid to the surface of the substrate and an outlet to remove the fluid from the surface of the substrate.

5. An apparatus for processing a substrate as recited in claim 4, wherein the fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, or a rinsing fluid.

6. An apparatus for processing a substrate as recited in claim 4, wherein the plurality of conduits further include an additional inlet to apply a surface tension reducing fluid to the surface of the substrate.

7. An apparatus for processing a substrate as recited in claim 1, wherein the active agent is at least one of a gas, liquid, or vapor.

8. An apparatus for processing a substrate as recited in claim 1, wherein the plurality of conduits surrounds the opening to the cavity.

9. An apparatus for processing a substrate as recited in claim 1, wherein the cavity includes at least one inlet configured to input the active gas into the cavity.

10. A method for processing a substrate, comprising:

applying an active agent to an active region of a surface of the substrate; and

generating a fluid meniscus on the surface of the substrate with a proximity head, the fluid meniscus surrounding the active region.

11. A method for processing a substrate as recited in claim 10, further comprising:

processing the surface of the substrate with the active agent; and

processing the surface of substrate with the fluid meniscus.

12. A method for processing a substrate as recited in claim 11, wherein processing the surface of the substrate with the active agent includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

13. A method for processing a substrate as recited in claim 10, wherein processing the surface of the substrate with the fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

14. A method for processing a substrate as recited in claim 11, wherein generating the fluid meniscus includes applying a fluid to the surface of the substrate through a fluid inlet and removing the fluid from the surface of the substrate through a fluid outlet.

15. A method for processing a substrate as recited in claim 14, wherein the fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, or a rinsing fluid.

16. A method for processing a substrate as recited in claim 13, wherein generating the fluid meniscus further includes applying an additional fluid to the surface of the substrate through an additional inlet, the additional fluid being a surface tension reducing fluid.

17. A method for processing a substrate as recited in claim 14, wherein removing the fluid includes siphoning the fluid to a container that is lower in elevation than the proximity head.

18. A method for processing a substrate as recited in claim 10, wherein the active region is defined by an opening on the surface of the substrate, the opening being to a cavity defined within the proximity head.

19. A method for processing a substrate, comprising:

generating a first fluid meniscus on a surface of the substrate; and

generating a second fluid meniscus on the surface of the substrate, the second fluid meniscus being adjacent to the first fluid meniscus, the generating the first fluid meniscus and the second fluid meniscus includes siphoning at least the first fluid from the first fluid meniscus.

20. A method for processing substrate as recited in claim 19, wherein siphoning includes removing at least the first fluid from the surface of the substrate through a tube to a container that is lower in elevation than the proximity head.

22. A method for processing substrate as recited in claim 20, wherein the siphoning is started by charging the tube with the at least first fluid.

23. A method for processing substrate as recited in claim 20, wherein the tube is charged by a vacuum.

24. A method for processing substrate as recited in claim 19, wherein the first fluid meniscus is self regulating.

30. A method for processing substrate as recited in claim 19, wherein the fluid meniscus is self regulating.

25. A method for processing substrate, comprising:

applying a fluid onto a surface of a substrate;

siphoning at least the fluid from the surface of the substrate, the removing being processed just as the fluid is applied to the surface of the substrate;

wherein the applying and the removing forms a fluid meniscus.

26. A method for processing substrate as recited in claim 25, wherein siphoning includes removing the fluid from the surface of the substrate through a tube to a container that is lower in elevation than the proximity head.

27. A method for processing substrate as recited in claim 25, wherein the fluid is a single phase fluid.

28. A method for processing substrate as recited in claim 25, wherein the siphoning is started by charging the tube with liquid.

29. A method for processing substrate as recited in claim 26, wherein the tube is charged by a vacuum.

31. A proximity head for processing a substrate, comprising:

at least one first conduit defined within the proximity head, the at least one conduit configured to apply a fluid to a surface of the substrate; and

at least one second conduit defined within the proximity head, the at least one second conduit being in close proximity to the at least one first conduit, the at least one second conduit being configured to siphon the fluid from the surface of the wafer;

wherein application of the fluid to the surface of the substrate and siphoning of the fluid from the surface of the substrate generates a fluid meniscus.

32. A proximity head for processing a substrate as recited in claim 31, further comprising,

at least one third conduit defined within the proximity head, the at least one conduit configured to apply an additional fluid to the substrate.

33. A proximity head for processing a substrate as recited in claim 31, wherein the additional fluid is a surface tension reducing fluid.

34. A proximity head for processing a substrate as recited in claim 31, wherein the fluid is a single phase fluid.

35. A proximity head for processing a substrate as recited in claim 31, wherein the second conduit is attached to a siphon tube.

36. A proximity head for processing a substrate as recited in claim 31, wherein the siphon tube includes a restrictor for adjusting fluid flow through the siphon tube.