Selective processing of microelectronic workpiece surfaces
First Claim
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1. Processing a microelectronic workpiece having a first side, a second side, and an edge, and a barrier layer on the second side and the edge of the workpiece, and a seed layer on the barrier layer, comprising:
- applying a metal layer on at least part of the seed layer;
rotating the workpiece;
providing a liquid including an acid and an oxidizing agent onto an outer margin of the second side of the workpiece and onto the edge of the workpiece, with the liquid removing the seed layer from the outer margin and edge of the workpiece.
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Abstract
A processing fluid is selectively applied or excluded from an outer peripheral margin of the front side, back side, or both sides of a workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece is spinning. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
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Citations
23 Claims
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1. Processing a microelectronic workpiece having a first side, a second side, and an edge, and a barrier layer on the second side and the edge of the workpiece, and a seed layer on the barrier layer, comprising:
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applying a metal layer on at least part of the seed layer;
rotating the workpiece;
providing a liquid including an acid and an oxidizing agent onto an outer margin of the second side of the workpiece and onto the edge of the workpiece, with the liquid removing the seed layer from the outer margin and edge of the workpiece. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for processing a workpiece having two sides and an edge, and with a barrier layer on the workpiece, and with a seed layer on the barrier layer including on the edge of the workpiece, comprising:
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plating a metal film onto the seed layer;
spinning the workpiece;
applying a liquid including de-ionized water, and an acid, and an oxidizer, to one side of the workpiece, with liquid flowing around the edge and onto the other side of the workpiece;
with the liquid removing the seed layer, and any metal film on the seed layer, at an outer margin and at the edge of the workpiece. - View Dependent Claims (18, 19, 20)
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21. Processing a microelectronic workpiece having a first side, a second side, and an edge, and a barrier layer on the second side and the edge of the workpiece, and a seed layer on substantially the entire barrier layer, comprising:
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applying a metal layer onto the seed layer over substantially the entire the second side of the workpiece;
rotating the workpiece;
providing a liquid including an acid and an oxidizing agent onto an outer margin of the second side of the workpiece and onto the edge of the workpiece, with the liquid removing the seed layer and the metal layer from the outer margin, and the liquid removing the seed layer from the edge of the workpiece. - View Dependent Claims (22, 23)
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Specification