Atomic layer deposition of metal oxynitride layers as gate dielectrics
First Claim
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1. A semiconductor device structure, comprising:
- a semiconductor substrate;
a metal oxynitride gate dielectric layer comprising a plurality of reacted monolayers on a surface of the semiconductor substrate; and
a gate over the metal oxynitride gate dielectric layer.
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Abstract
A metal oxynitride layer formed by atomic layer deposition of a plurality of reacted monolayers, the monolayers comprising at least one each of a metal, an oxide and a nitride. The metal oxynitride layer is formed from zirconium oxynitride, hafnium oxynitride, tantalum oxynitride, or mixtures thereof. The metal oxynitride layer is used in gate dielectrics as a replacement material for silicon dioxide. A semiconductor device structure having a gate dielectric formed from a metal oxynitride layer is also disclosed.
490 Citations
14 Claims
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1. A semiconductor device structure, comprising:
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a semiconductor substrate;
a metal oxynitride gate dielectric layer comprising a plurality of reacted monolayers on a surface of the semiconductor substrate; and
a gate over the metal oxynitride gate dielectric layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device structure comprising a metal oxynitride layer formed by the process comprising:
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providing a semiconductor substrate; and
forming the metal oxynitride layer on a surface of the semiconductor substrate by separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification