Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein;
an interconnection main layer embedded in the opening and containing Cu as a main component; and
a barrier film interposed between the interlevel insulating film and the interconnection main layer within the opening, the barrier film containing, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.
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Abstract
A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.
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Citations
28 Claims
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1. A semiconductor device comprising:
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an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein;
an interconnection main layer embedded in the opening and containing Cu as a main component; and
a barrier film interposed between the interlevel insulating film and the interconnection main layer within the opening, the barrier film containing, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device, comprising:
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forming an opening in an interlevel insulating film disposed on a semiconductor substrate;
forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening;
forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer; and
performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of manufacturing a semiconductor device, comprising:
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forming an opening in an interlevel insulating film disposed on a semiconductor substrate;
forming a main film to fill the opening, the main film containing, as a main component, Cu used as a material of an interconnection main layer;
forming an auxiliary film containing a predetermined metal element on the main film after forming the main film; and
performing a heat treatment after forming the auxiliary film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the main film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification