Liquid crystal display device including driving circuit and method of fabricating the same
First Claim
1. A method of fabricating an array substrate structure for a liquid crystal display device, comprising:
- sequentially disposing a transparent conductive material layer and a metallic material layer on a substrate defining a display area and a non-display area, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion;
forming a first gate electrode in the pixel TFT portion, a second gate electrode in the n-type driving TFT portion, a third gate electrode in the p-type driving TFT portion, a gate line in the display area, a pixel electrode in the pixel electrode area, and a first capacitor electrode connected to the pixel electrode through a first mask process;
sequentially disposing a gate insulating layer and an amorphous silicon layer on the first gate electrode, the second gate electrode, the third gate electrode, the gate line, the pixel electrode and the first capacitor electrode;
doping the amorphous silicon layer in the p-type driving TFT portion with high concentration p-type impurities (p+) through a second mask process to define a first active region and a first ohmic contact region;
doping the amorphous silicon layer in the pixel TFT portion and the n-type driving TFT portion with high concentration n-type impurities (n+) and low concentration n-type impurities (n−
) through a third mask process to define second and third active regions, second and third ohmic contact regions, first and second lightly doped drain (LDD) regions and a storage capacitor area;
disposing a passivation layer on the amorphous silicon layer;
forming a first semiconductor layer in the pixel TFT portion, a second semiconductor layer in the n-type driving TFT portion, a third semiconductor layer in the p-type driving TFT portion, a second capacitor electrode in the storage capacitor area through a fourth mask process;
forming a passivation pattern on the first, second and third semiconductor layers and the second capacitor electrode through the fourth mask process, wherein side portions of each of the first, second and third semiconductor layers are exposed; and
forming first source and drain electrodes, second source and drain electrodes, third source and drain electrodes and a data line through a fifth mask process, portions of the first source and drain electrodes contacting the side portions of the first semiconductor layer, portions of the second source and drain electrodes contacting the side portions of the second semiconductor layer, portions of the third source and drain electrodes contacting the side portions of the third semiconductor layer, and the data line connected to the first source electrode.
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Abstract
A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.
21 Citations
55 Claims
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1. A method of fabricating an array substrate structure for a liquid crystal display device, comprising:
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sequentially disposing a transparent conductive material layer and a metallic material layer on a substrate defining a display area and a non-display area, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion;
forming a first gate electrode in the pixel TFT portion, a second gate electrode in the n-type driving TFT portion, a third gate electrode in the p-type driving TFT portion, a gate line in the display area, a pixel electrode in the pixel electrode area, and a first capacitor electrode connected to the pixel electrode through a first mask process;
sequentially disposing a gate insulating layer and an amorphous silicon layer on the first gate electrode, the second gate electrode, the third gate electrode, the gate line, the pixel electrode and the first capacitor electrode;
doping the amorphous silicon layer in the p-type driving TFT portion with high concentration p-type impurities (p+) through a second mask process to define a first active region and a first ohmic contact region;
doping the amorphous silicon layer in the pixel TFT portion and the n-type driving TFT portion with high concentration n-type impurities (n+) and low concentration n-type impurities (n−
) through a third mask process to define second and third active regions, second and third ohmic contact regions, first and second lightly doped drain (LDD) regions and a storage capacitor area;
disposing a passivation layer on the amorphous silicon layer;
forming a first semiconductor layer in the pixel TFT portion, a second semiconductor layer in the n-type driving TFT portion, a third semiconductor layer in the p-type driving TFT portion, a second capacitor electrode in the storage capacitor area through a fourth mask process;
forming a passivation pattern on the first, second and third semiconductor layers and the second capacitor electrode through the fourth mask process, wherein side portions of each of the first, second and third semiconductor layers are exposed; and
forming first source and drain electrodes, second source and drain electrodes, third source and drain electrodes and a data line through a fifth mask process, portions of the first source and drain electrodes contacting the side portions of the first semiconductor layer, portions of the second source and drain electrodes contacting the side portions of the second semiconductor layer, portions of the third source and drain electrodes contacting the side portions of the third semiconductor layer, and the data line connected to the first source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method of fabricating an array substrate structure for a liquid crystal display device, comprising:
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sequentially disposing a transparent conductive material layer and a metallic material layer on a substrate defining a display area and a non-display area, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having a driving TFT portion;
forming a first gate electrode in the pixel TFT portion and a second gate electrode in the driving TFT portion, a gate line in the display area, a pixel electrode in the pixel electrode area through a first mask process, wherein a first capacitor electrode connects to the pixel electrode;
sequentially disposing a gate insulating layer and an amorphous silicon layer on the first, second gate electrodes, the gate line, the pixel electrode, and the first capacitor electrode;
doping the amorphous silicon layer with impurities through a second mask process to define a first active region, a first ohmic contact region, and storage capacitor area in the pixel TFT portion, and a second active region and a second ohmic contact region in the driving TFT portion;
disposing a passivation layer on the polycrystalline silicon layer;
forming a first semiconductor layer in the pixel TFT portion, a second semiconductor layer in the driving TFT portion, a second capacitor electrode in the storage capacitor area, and a passivation pattern on the first and second semiconductor layers and the second capacitor electrode through a third mask process, side portions of each of the first and second semiconductor layers are exposed using the passivation pattern; and
forming first source and drain electrodes, second source and drain electrodes, and a data line through a fourth mask process, the first source and drain electrodes contacting the side portions of the first semiconductor layer, the second source and drain electrodes contacting the side portions of the second semiconductor layer, and the data line connected to the first source electrode. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. An array substrate structure for a liquid crystal display device, comprising:
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first, second and third gate electrodes on a substrate having a display area and a non-display area, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion, the first gate electrode disposed in the pixel TFT portion, the second gate electrode disposed in the n-type driving TFT portion, the third gate electrode disposed in the p-type driving TFT portion;
a gate line in the display area on the substrate;
a pixel electrode in the pixel electrode area on the substrate;
a gate insulating layer on the first, second, and third gate electrodes, the gate line, and the pixel electrode;
first, second and third semiconductor layers of polycrystalline silicon on the gate insulating layer, the first semiconductor layer disposed in the pixel TFT portion, the second semiconductor layer disposed in the n-type driving TFT portion, and the third semiconductor layer disposed in the p-type driving TFT portion;
a passivation pattern on the first, second and third semiconductor layers, the passivation pattern exposing side portions of each of the first, second and third semiconductor layers;
first source and drain electrodes, second source and drain electrodes, and third source and drain electrodes on the substrate, the first source and drain electrodes contacting the side portions of the first semiconductor layer, the second source and drain electrodes contacting the side portions of the second semiconductor layer, the third source and drain electrodes contacting the side portions of the third semiconductor layer; and
a data line crossing the gate line and connected to the first source electrode. - View Dependent Claims (50, 51, 52, 53, 54, 55)
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Specification